SMBJ3V-E3/5B VISHAY [Vishay Siliconix], SMBJ3V-E3/5B Datasheet
SMBJ3V-E3/5B
Related parts for SMBJ3V-E3/5B
SMBJ3V-E3/5B Summary of contents
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... A MAXIMUM MAXIMUM REVERSE CLAMPING LEAKAGE VOLTAGE CURRENT PPM MAX 10/1000 µs µ 200 3.3 7.3 50 SMBJ3V3 Vishay General Semiconductor SYMBOL VALUE P 600 PPM I 50 PPM I 200 PPM I 60 FSM P 5 M(AV 175 J STG MAXIMUM TYPICAL CLAMPING TEMP ...
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... Thermal resistance from junction to lead - Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal (2) Thermal resistance from junction to ambient - Mounted on the recommended P.C.B. pad layout ORDERING INFORMATION PREFERRED P/N UNIT WEIGHT (g) SMBJ3V3-E3/52 0.096 SMBJ3V-E3/5B 0.096 RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted) A 150 µ ...
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... Figure 7. Typical Peak Forward Voltage Drop vs. Peak 100 1000 DO-214AA (SMB-J-Bend) Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 MIN. (2.18 MIN.) 0.180 (4.57) 0.160 (4.06) 0.060 MIN. (1.52 MIN.) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) SMBJ3V3 Vishay General Semiconductor T = 175 ° ° 0.2 0.4 0.6 0.8 1 1.2 1.4 1 Forward Voltage Drop (V) ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...