BAW56-V_12 VISHAY [Vishay Siliconix], BAW56-V_12 Datasheet - Page 2

• Manufacturer Part Number: BAW56-V_12
• Description: Small Signal Switching Diode, Dual
• Manufacturer: VISHAY [Vishay Siliconix]

BAW56-V
Vishay Semiconductors
Thermal Characteristics
T
1)
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Thermal resistance junction to
ambiant air
Junction temperature
Storage temperature range
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
amb
amb
amb
Device on fiberglass substrate, see layout
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
14356
Figure 1. Forward Current vs. Forward Voltage
1000
0.01
100
0.1
Parameter
Parameter
10
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
T
j
= 100 °C
V
F
[e-mail], [e-mail],
- Forward Voltage (V)
For technical questions within your region, please contact one of the following:
25 °C
I
F
V
V
V
V
F
= 10 mA to I
R
R
R
= V
= 70 V, T
= 25 V, T
= 6 V, R
Test condition
Test condition
I
I
I
F
V
I
F
F
R
F
= 150 mA
R
= 10 mA
= 50 mA
= 0, f = 1 MHz
= 1 mA
= 70 V
L
j
j
= 150 °C
= 150 °C
R
= 100 Ω
= 1 mA,
Symbol
C
V
V
V
V
I
I
I
t
R
R
R
rr
F
F
F
F
D
Symbol
R
T
thJA
T
stg
22290
j
Figure 2. Peak forward current I
[e-mail]
Min.
- 65 to + 150
Value
Typ.
430
150
Document Number 85549
Max.
1000
1250
715
855
100
2.5
FM
30
2
6
Rev. 1.8, 12-Aug-10
= f (t
p
K/W
Unit
)
°C
°C
Unit
mV
mV
mV
mV
µA
µA
µA
pF
ns