D2013 SEME-LAB [Seme LAB], D2013 Datasheet - Page 2

• Manufacturer Part Number: D2013
• Description: METAL GATE RF SILICON FET
• Manufacturer: SEME-LAB [Seme LAB]

ELECTRICAL CHARACTERISTICS
* Pulse Test:
THERMAL DATA
Semelab plc.
BV
I
I
V
g
G
h
VSWR Load Mismatch Tolerance
C
C
C
R
DSS
GSS
fs
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
GS(th)
PS
iss
oss
rss
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THj–case
DSS
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage *
Forward Transconductance *
Common Source Power Gain
Drain Efficiency
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Pulse Duration = 300
Telephone [phone]. Fax [phone].
E-mail: [e-mail]
Thermal Resistance Junction – Case
HAZARDOUS MATERIAL WARNING
m
s , Duty Cycle
V
V
V
(T
DS
DS
DS
case
V
V
V
I
V
P
V
f = 1GHz
D
GS
DS
GS
DS
O
DS
Website: http://www.semelab.co.uk
= 0
= 28V
= 28V
= 10mA
= 20W
= 25°C unless otherwise stated)
= 28V
= 10V
= 28V
= 0
= 20V
Test Conditions
TOTAL DEVICE
£
2%
PER SIDE
PER SIDE
V
V
V
GS
GS
GS
= –5V f = 1MHz
= 0
= 0
I
V
V
V
I
I
D
D
DQ
GS
DS
DS
= 10mA
= 0.8A
= 0.8A
= 0
= V
= 0
f = 1MHz
f = 1MHz
GS
Min.
0.72
20:1
65
10
40
1
Typ.
D2013UK
Max. 2.1°C / W
Max. Unit
48
24
1
1
7
2
Prelim.12/00
mA
m
dB
pF
pF
pF
—
%
V
V
S
A