D2011 SEME-LAB [Seme LAB], D2011 Datasheet - Page 2

• Manufacturer Part Number: D2011
• Description: METAL GATE RF SILICON FET
• Manufacturer: SEME-LAB [Seme LAB]

ELECTRICAL CHARACTERISTICS
* Pulse Test:
THERMAL DATA
Semelab plc.
BV
I
I
V
g
G
h
VSWR Load Mismatch Tolerance
C
C
C
R
DSS
GSS
fs
GS(th)
iss
oss
rss
THj–case
PS
DSS
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Pulse Duration = 300
Telephone [phone]. Fax [phone].
E-mail:
[e-mail]
Thermal Resistance Junction – Case
m
s , Duty Cycle
V
V
V
(T
DS
DS
DS
case
V
V
V
I
V
P
V
f = 1GHz
D
GS
DS
GS
DS
O
DS
Website:
= 0
= 28V
= 28V
= 10mA
= 10W
= 25°C unless otherwise stated)
= 28V
= 10V
= 28V
= 0
= 20V
Test Conditions
£
2%
http://www.semelab.co.uk
V
V
V
GS
GS
GS
= –5V f = 1MHz
= 0
= 0
I
V
V
V
I
I
D
D
DQ
GS
DS
DS
= 10mA
= 1.6A
= 0.8A
= 0
= 0
= V
f = 1MHz
f = 1MHz
GS
Min.
1.44
20:1
65
10
40
1
Typ.
D2011UK
Max. 2.5°C / W
Max. Unit
96
48
8
8
7
4
Prelim. 9/00
mA
m
dB
pF
pF
pF
—
%
V
V
S
A