D2003 SEME-LAB [Seme LAB], D2003 Datasheet - Page 2

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D2003

Manufacturer Part Number
D2003
Description
METAL GATE RF SILICON FET
Manufacturer
SEME-LAB [Seme LAB]
Datasheet
ELECTRICAL CHARACTERISTICS
* Pulse Test:
THERMAL DATA
Semelab plc.
BV
I
I
V
g
G
h
VSWR
C
C
C
DSS
GSS
fs
R
GS(th)
iss
oss
rss
PS
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
DSS
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THj–case
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Pulse Duration = 300
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Thermal Resistance Junction – Case
HAZARDOUS MATERIAL WARNING
m
s , Duty Cycle
V
V
V
(T
DS
DS
DS
case
V
V
V
I
V
P
V
f = 1GHz
D
GS
DS
GS
DS
O
DS
Website: http://www.semelab.co.uk
= 28V
= 28V
= 28V
= 10mA
= 5W
= 25°C unless otherwise stated)
= 28V
= 10V
= 28V
= 0
= 20V
Test Conditions
TOTAL DEVICE
£
2%
PER SIDE
PER SIDE
V
V
V
GS
GS
GS
= –5V f = 1MHz
= 0
= 0
I
V
V
V
I
I
D
D
DQ
GS
DS
DS
= 10mA
= 1A
= 0.2A
= 0
= V
= 0
f = 1MHz
f = 1MHz
GS
Min.
0.18
20:1
65
13
40
1
Typ.
D2003UK
Max. 5.0°C / W
Max. Unit
0.5
12
1
1
7
6
Prelim.01/01
mA
m
dB
pF
pF
pF
%
V
V
S
A

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