D1053 SEME-LAB [Seme LAB], D1053 Datasheet - Page 2

• Manufacturer Part Number: D1053
• Description: METAL GATE RF SILICON FET
• Manufacturer: SEME-LAB [Seme LAB]

ELECTRICAL CHARACTERISTICS
* Pulse Test:
THERMAL DATA
Semelab plc.
BV
I
I
V
g
V
G
VSWR
C
C
C
DSS
GSS
fs
R
GS(th)
GS(th)match
iss
oss
rss
PS
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THj–case
DSS
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Gate Threshold Voltage
Matching Between Sides
Pulse Duration = 300 s , Duty Cycle
Telephone [phone]. Telex: 341927. Fax [phone].
Thermal Resistance Junction – Case
HAZARDOUS MATERIAL WARNING
V
V
V
(T
DS
DS
DS
case
V
V
V
I
V
I
P
V
f = 1GHz
D
D
GS
DS
GS
DS
O
DS
= 0
= 28V
= 28V
= 10mA
= 10mA
= 50W
= 25°C unless otherwise stated)
= 28V
= 10V
= 28V
= 0
= 20V
Test Conditions
TOTAL DEVICE
2%
PER SIDE
PER SIDE
V
V
V
GS
GS
GS
= –5V f = 1MHz
= 0
= 0
I
V
V
V
I
V
I
D
D
DQ
GS
DS
DS
DS
= 100mA
= 1A
= 0.8A
= 0
= V
= V
= 0
f = 1MHz
f = 1MHz
GS
GS
Min.
20:1
0.8
7.5
70
45
1
Typ.
D1053UK
Max. 1.0°C / W
Max. Unit
0.1
2.5
60
30
1
1
7
Prelim. 3/95
mhos
mA
dB
pF
pF
pF
—
%
V
V
V
A