50MT060ULSAPBF VISHAY [Vishay Siliconix], 50MT060ULSAPBF Datasheet - Page 5

• Manufacturer Part Number: 50MT060ULSAPBF
• Description: 'Low Side Chopper' IGBT MTP (Ultrafast Speed IGBT), 100 A
• Manufacturer: VISHAY [Vishay Siliconix]

Revision: 17-Jun-11
Fig. 8 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 9 - Typical Gate Charge vs. Gate to Emitter Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
14000
12000
10000
8000
6000
4000
2000
20.0
16.0
12.0
8.0
4.0
0.0
0
1
0
I C = 100A
V CE = 480V
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Cies
Coes
Cres
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
Q G, Total Gate Charge (nC)
100
1
1E-006
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
D = 0.50
0.01
V GE = 0V, f = 1 MHZ
C
C res = C gc
C
0.02
0.05
0.20
0.10
ies
oes
200
Fig. 7 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
= C
= C
ce
ge
+ C
+C
1E-005
100
SINGLE PULSE
( THERMAL RESPONSE )
gc
gc
, C
300
ce
For technical questions, contact:
SHORTED
1000
400
0.0001
t 1 , Rectangular Pulse Duration (sec)
0.001
5
[e-mail]
τ
Fig. 11 - Typical Switching Losses vs. Junction Temperature
J
?
J
τ
1
Ci= τi/Ri
?
1
Fig. 10 - Typical Switching Losses vs. Gate Resistance
Ci
i?Ri
R
100
0.1
1
5.0
4.0
3.0
2.0
1.0
0.0
R
10
0.01
1
1
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-60 -40 -20
τ
2
0
R
?
2
2
R
V CC = 480V
V GE = 15V
T J = 25°C
I C = 100A
R G = 5.0Ω
V GE = 15V
V CC = 480V
2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
R
τ
3
3
R
?
3
3
T J , Junction Temperature (°C)
τ
R g , Gate Resistance ( Ω )
C
?
Ri (°C/W)
50MT060ULSTAPbF
0
Vishay Semiconductors
0.200
0.296
0.102
0.1
10
20
40
0.038934
0.52648
τi (sec)
0.000993
60
80 100 120 140 160
20
Document Number: 94540
E OFF
I C = 25A
1
I C = 50A
I C = 100A
E ON
30