T1110P6-SD-F VISHAY [Vishay Siliconix], T1110P6-SD-F Datasheet - Page 2

• Manufacturer Part Number: T1110P6-SD-F
• Description: Silicon PIN Photodiode
• Manufacturer: VISHAY [Vishay Siliconix]

T1110P6
Vishay Semiconductors
Note
• The measurements are based on samples of die which are mounted on a TO-header without resin coating
BASIC CHARACTERISTICS (T
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2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
BASIC CHARACTERISTICS (T
PARAMETER
Breakdown voltage
Forward voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V
Short circuit current
Temperature coefficient of I
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
94 8403
1000
100
10
1
20
T
amb
40
- Ambient Temperature (°C)
k
OC
60
V
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R
amb
= 10 V
amb
E
E
E
E
E
80
e
V
V
e
e
e
e
R
R
= 1 mW/cm
= 25 °C, unless otherwise specified)
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
V
V
V
This datasheet is subject to change without notice.
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
R
= 25 °C, unless otherwise specified)
TEST CONDITION
R
R
I
R
V
= 10 V,  = 950 nm
= 10 V, R
= 10 V, R
R
= 100 μA, E = 0
 = 820 nm
 = 820 nm
I
= 10 V, E = 0
F
Silicon PIN Photodiode
100
V
= 50 mA
R
= 5 V
2
2
2
2
2
,  = 950 nm,
,  = 950 nm
,  = 950 nm
,  = 950 nm
,  = 950 nm
L
L
= 1 k,
= 1 k,
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Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
TK
V
NEP
TK
V

C
C
V
I
I

(BR)
I

t
ro
OC
ra
0.1
t
VOC
k
p
r
f
F
D
D
Ik
94 8409
1.4
1.2
1.0
0.8
0.6
0
MIN.
T
20
amb
- Ambient Temperature (°C)
430 to 1100
4 x 10
λ = 950 nm
V
TYP.
40
- 2.6
± 60
350
940
100
100
0.1
60
70
25
50
55
R
1
2
= 5 V
-14
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60
Document Number: 81122
MAX.
1.3
5
Rev. 1.4, 23-Mar-11
80
100
W/Hz
mV/K
UNIT
%/K
deg
mV
nm
nm
nA
μA
μA
pF
pF
ns
ns
V
V