MBR1100-M3 VISHAY [Vishay Siliconix], MBR1100-M3 Datasheet - Page 3

• Manufacturer Part Number: MBR1100-M3
• Description: Schottky Rectifier, 1 A
• Manufacturer: VISHAY [Vishay Siliconix]

Note
(1)
Revision: 21-Sep-11
Formula used: T
Pd = Forward power loss = I
93438_01
93438_02
93438_03
Fig. 1 - Maximum Forward Voltage Drop Characteristics
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0.0001
0.001
0.01
100
Fig. 2 - Typical Values of Reverse Current vs.
0.1
10
10
0.1
10
Fig. 3 - Typical Junction Capacitance vs.
1
0
0
0
0
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T
T
J
J
C
= 150 °C
= 125 °C
= T
V
20
20
FM
J
Reverse Voltage
Reverse Voltage
V
V
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.4
- (Pd + Pd
R
R
- Forward Voltage Drop (V)
T
- Reverse Voltage (V)
- Reverse Voltage (V)
J
= 25 °C
F(AV)
40
40
T
J
REV
x V
= 25 °C
0.8
) x R
FM
60
60
at (I
T
T
T
thJC
J
J
J
= 150 °C
= 125 °C
= 25 °C
F(AV)
;
1.2
/D) (see fig. 6); Pd
80
80
100
100
1.6
REV
3
= Inverse power loss = V
VS-MBR1100, VS-MBR1100-M3
93438_04
93438_06
93438_05
Fig. 4 - Maximum Allowable Case Temperature vs.
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
160
140
120
100
100
0.8
0.6
0.4
0.2
Fig. 5 - Forward Power Loss Characteristics
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80
60
40
20
10
0
0
1
10
0
0
Square wave (D = 0.50)
80 % Rated V
see note (1)
At Any Rated Load Condition
And With rated V
Following Surge
t
Average Forward Current - I
I
p
F(AV)
0.2
Average Forward Current
- Square Wave Pulse Duration (µs)
R1
RMS Limit
x I
- Average Forward Current (A)
Vishay Semiconductors
0.4
R
(1 - D); I
100
0.5
R
0.6
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applied
RRM
R
0.8
Applied
at V
Document Number: 93438
R1
DC
1000
1
1
= 80 % rated V
1.2
F(AV)
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
1.4
(A)
10 000
1.5
1.6
R