IRKT105/16AS90 IRF [International Rectifier], IRKT105/16AS90 Datasheet - Page 3

• Manufacturer Part Number: IRKT105/16AS90
• Description: THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
• Manufacturer: IRF [International Rectifier]

Triggering
Blocking
Thermal and Mechanical Specifications
www.irf.com
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
T
T
R
R
T
wt
P
P
I
-V
V
I
V
I
I
I
V
dv/dt Max. critical rate of rise
(5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90.
RRM
DRM
GM
GT
GD
Devices
stg
IRK.105
J
INS
thJC
thCS
GM
G(AV)
GT
GD
GM
Max. peak reverse and
off-state leakage current
at V
RMS isolation voltage
of off-state voltage (5)
Parameters
Max. peak gate power
Max. average gate power
Max. peak gate current
Max. peak negative
gate voltage
Max. gate voltage
required to trigger
Max. gate current
required to trigger
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Parameters
Junction operating
temperature range
Storage temp. range
Max. internal thermal
resistance, junction
to case
Typical thermal resistance
case to heatsink
Mounting torque ± 10%
Approximate weight
Case style
Parameters
RRM
180
0.04
, V
DRM
o
120
0.05
to heatsink
busbar
Sine half wave conduction
o
0.06
90
o
0.08
60
2500 (1 min)
3500 (1 sec)
o
- 40 to 130
TO-240AA
IRK. 105
- 40 to 150
IRK.105
IRK.105
110 (4)
0.135
0.25
270
150
4.0
2.5
1.7
12
80
500
1 0
0.1
20
3
3
6
5
3
0.12
30
thJC
o
when devices operate at different conduction angles than DC)
180
0.03
o
Units
Units
gr (oz)
Units
K/W
mA
V/µs
mA
mA
Nm
°C
W
A
V
V
V
120
0.05
Rect. wave conduction
o
T
T
T
T
T
T
Conditions
Conditions
T
rated V
T
rated V
Conditions
Mounting surface flat, smooth and greased
Per module, DC operation
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
JEDEC
T
50 Hz, circuit to base, all terminals
shorted
T
J
J
J
J
J
J
gate open circuit
J
J
J
J
= - 40°C
= 25°C
= 125°C
= - 40°C
= 25°C
= 125
= 125
= 125°C
= 130
= 130
0.06
90
o
DRM
DRM
o
o
C,
C,
o
o
C, gate open circuit
C, linear to 0.67 V
applied
applied
Bulletin I27133 rev. I 09/04
0.08
60
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
o
IRK.105 Series
0.12
30
DRM
o
,
Units
°C/ W
3