HFA3127 INTERSIL [Intersil Corporation], HFA3127 Datasheet - Page 2

• Manufacturer Part Number: HFA3127
• Description: Ultra High Frequency Transistor Arrays
• Manufacturer: INTERSIL [Intersil Corporation]

Absolute Maximum Ratings
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V
Collector Current (100% Duty Cycle) . . . . . 18.5mA at T
Peak Collector Current (Any Condition) . . . . . . . . . . . . . . . . . . 65mA
Operating Information
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Electrical Specifications
DC NPN CHARACTERISTICS
Collector-to-Base Breakdown
Voltage, V
Collector-to-Emitter Breakdown
Voltage, V
Collector-to-Emitter Breakdown
Voltage, V
Emitter-to-Base Breakdown
Voltage, V
Collector-Cutoff-Current, I
Collector-Cutoff-Current, I
Collector-to-Emitter Saturation
Voltage, V
Base-to-Emitter Voltage, V
DC Forward-Current Transfer
Ratio, h
Early Voltage, V
Base-to-Emitter Voltage Drift
Collector-to-Collector Leakage
DYNAMIC NPN CHARACTERISTICS
Noise Figure
f
Product
Power Gain-Bandwidth Product,
f
1.
T
MAX
Current Gain-Bandwidth
JA
is measured with the component mounted on an evaluation PC board in free air.
FE
(BR)CBO
(BR)CEO
(BR)CES
(BR)EBO
CE(SAT)
PARAMETER
PARAMETER
A
CEO
CBO
BE
3-448
T
T
A
A
I
I
I
I
V
V
I
I
I
V
I
I
f = 1.0GHz, V
I
I
I
I
= 25
C
C
C
E
C
C
C
C
C
= 25
C
C
C
C
CE
CB
CE
= 10 A, I
= 100 A, I
= 100 A, I
= 100 A, Base Shorted to Emitter
= 10mA, I
= 10mA
= 10mA
= 1mA, V
= 10mA
= 5mA, Z
= 1mA, V
= 10mA, V
= 10mA, V
HFA3046, HFA3096, HFA3127, HFA3128
o
= 6V, I
= 8V, I
= 2V
o
C
C
34mA at T
37mA at T
TEST CONDITIONS
TEST CONDITIONS
B
E
C
CE
S
CE
B
E
B
CE
CE
= 0
= 0
CE
= 0
= 50
= 1mA
= 0
= 0
= 3.5V
= 5V
= 5V
= 5V
= 5V,
o
C to 125
J
J
J
= 150
= 125
= 110
o
o
o
o
C
C
C
C
Thermal Information
Thermal Resistance (Typical, Note 1)
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175
Maximum Junction Temperature (Plastic Package) . . . . . . . 150
Maximum Storage Temperature Range . . . . . . . . . . -65
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
14 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
(SOIC - Lead Tips Only)
MIN
MIN
5.5
12
10
40
20
8
-
-
-
-
-
-
-
-
-
-
TYP
0.85
TYP
-1.5
DIE
130
DIE
0.1
0.3
3.5
5.5
18
12
20
50
6
2
1
8
6
MAX
MAX
0.95
100
0.5
10
-
-
-
-
-
-
-
-
-
-
-
-
MIN
MIN
5.5
12
10
40
20
8
-
-
-
-
-
-
-
-
-
-
SOIC
SOIC
TYP
0.85
TYP
130
-1.5
0.1
0.3
3.5
5.5
2.5
18
12
20
50
6
2
1
8
MAX
MAX
0.95
100
0.5
10
-
-
-
-
-
-
-
-
-
-
-
-
o
C to 150
JA
UNITS
mV/
UNITS
120
115
(
GHz
GHz
GHz
o
nA
nA
pA
dB
V
V
V
V
V
V
V
C/W)
o
C
o
o
o
o
C
C
C
C