APT8056BVFR_04 ADPOW [Advanced Power Technology], APT8056BVFR_04 Datasheet - Page 3

• Manufacturer Part Number: APT8056BVFR_04
• Description: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
• Manufacturer: ADPOW [Advanced Power Technology]

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
30
25
20
15
10
40
32
24
16
16
12
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
5
0
8
0
8
4
0
-50
25
V
0
0
V
APT8056BVFR
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
@ <0.5 % DUTY CYCLE
-25
T
250µSEC. PULSE TEST
V
GS
J
V GS =6.5V, 7V, 10V & 15V
T
, JUNCTION TEMPERATURE (°C)
50
C
= 10V
D
100
, CASE TEMPERATURE (°C)
[Cont.]
T J = +125°C
2
0
T J = +25°C
25
75
200
50
4
100
75
300
100 125 150
T J = -55°C
6
5.5V
125
4.5V
5V
6V
150
400
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
1.3
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30
25
20
15
10
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
5
0
-50
-50
V
0
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
, JUNCTION TEMPERATURE (°C)
= 10V @ 0.5 I
T
NORMALIZED TO
V GS =6.5V, 7V, 10V & 15V
, DRAIN CURRENT (AMPERES)
4
V GS =10V
C
6
, CASE TEMPERATURE (°C)
0
0
DS
25
25
12
(ON) vs DRAIN CURRENT
8
D
[Cont.]
50
50
12
18
75
75 100 125 150
100 125 150
V GS =20V
16
24
5.5V
4.5V
6V
5V
20
30