APT8020B2LL_04 ADPOW [Advanced Power Technology], APT8020B2LL_04 Datasheet - Page 4

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APT8020B2LL_04

Manufacturer Part Number
APT8020B2LL_04
Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer
ADPOW [Advanced Power Technology]
Datasheet
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
2500
2000
1500
1000
152
100
200
180
160
140
120
100
500
50
10
16
12
80
60
40
20
1
8
4
0
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 10, MAXIMUM SAFE OPERATING AREA
10
10
0
1
V
V
R
T
L = 100µH
E
diode reverse recovery.
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
T C =+25°C
T J =+150°C
SINGLE PULSE
DS
DD
G
J
ON
J
DD
G
= 125°C
LIMITED BY R DS (ON)
= 5Ω
= 125°C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
OPERATION HERE
D
= 5Ω
= 533V
includes
= 533V
= 38A
Q
20
20
50
g
, TOTAL GATE CHARGE (nC)
E
V DS =400V
10
on
100
30
30
I
I
V DS =160V
D
D
t
d(off)
(A)
(A)
150
40
40
100
t
d(on)
E
off
V DS =640V
200
50
50
250
800
60
60
10mS
100µS
1mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
1,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
6000
5000
4000
3000
2000
1000
100
200
100
100
10
FIGURE 15, RISE AND FALL TIMES vs CURRENT
80
60
40
20
1
0
0
0.3
10
0
0
V
V
V
R
T
L = 100µH
V
I
T
L = 100µH
E
diode reverse recovery.
D
DS
SD
DD
J
DD
J
ON
G
= 38A
= 125°C
= 125°C
5
= 5Ω
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 533V
= 533V
includes
0.5
T J =+150°C
R
20
10
10
G
, GATE RESISTANCE (Ohms)
15 20 25 30 35 40
0.7
20
30
I
D
0.9
(A)
T J =+25°C
t
f
40
30
E
1.1
off
t
r
40
50
1.3
E
on
45 50
C iss
C oss
C rss
1.5
60
50

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