APT8014JLL_03 ADPOW [Advanced Power Technology], APT8014JLL_03 Datasheet - Page 4

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APT8014JLL_03

Manufacturer Part Number
APT8014JLL_03
Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer
ADPOW [Advanced Power Technology]
Datasheet
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
3000
2500
2000
1500
1000
160
140
120
100
500
168
100
80
60
40
20
50
10
16
12
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
5
1
8
4
0
FIGURE 10, MAXIMUM SAFE OPERATING AREA
10
10
0
1
V
V
R
T
L = 100µH
E
diode reverse recovery.
FIGURE 14, DELAY TIMES vs CURRENT
DS
V
R
T
L = 100µH
T C =+25°C
T J =+150°C
SINGLE PULSE
DD
G
J
ON
LIMITED BY R DS (ON)
J
DD
G
OPERATION HERE
= 125°C
= 3
= 125°C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
50
D
= 3
= 533V
includes
20
= 533V
20
= 52A
Q
g
100 150 200 250 300 350 400
, TOTAL GATE CHARGE (nC)
30
30
10
V DS = 400V
E
t
on
d(on)
V DS = 160V
E
40
40
off
I
I
D
D
(A)
(A)
50
50
100
60
V DS = 640V
t
60
d(off)
70
70
800
80
80
10mS
100µS
1mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
12000
10000
1,000
8000
6000
4000
2000
100
200
100
140
120
100
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
80
60
40
20
1
0
0
10
0
0.3
0
V
V
V
R
T
L = 100µH
V
I
T
L = 100µH
E
diode reverse recovery.
D
DS
SD
DD
J
DD
J
ON
G
= 52A
= 125°C
= 125°C
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 3
T J =+150°C
= 533V
= 533V
includes
20
0.5
R
10
10
G
, GATE RESISTANCE (Ohms)
30
15 20 25 30 35 40
0.7
20
40
E
I
on
D
0.9
T J =+25°C
(A)
t
r
50
30
1.1
t
f
60
40
E
1.3
off
70
C rss
C oss
45 50
C iss
1.5
50
80
APT8014JLL

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