APT6017LLL ADPOW [Advanced Power Technology], APT6017LLL Datasheet - Page 2

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APT6017LLL

Manufacturer Part Number
APT6017LLL
Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer
ADPOW [Advanced Power Technology]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT6017LLL
Manufacturer:
APT
Quantity:
15 500
1
2
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
Symbol
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
R
C
R
C
V
dv
C
Q
Q
Q
d(on)
d(off)
I
Q
t
I
SM
oss
t
t
SD
iss
rss
S
/
gs
gd
r
rr
f
JC
JA
g
rr
dt
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Peak Diode Recovery
Characteristic
Junction to Case
Junction to Ambient
These dimensions are equal to the TO-247 without the mounting hole.
T-MAX
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Dimensions in Millimeters and (Inches)
TM
(B2) Package Outline
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
3
dv
4.50 (.177) Max.
1
2
/
dt
1.01 (.040)
1.40 (.055)
(V
5.45 (.215) BSC
S
(Body Diode)
5
= -I
GS
S
2-Plcs.
= -I
= 0V, I
D[Cont.]
D[Cont.]
15.49 (.610)
16.26 (.640)
5,256,583
S
, dl
= -I
, dl
S
/dt = 100A/µs)
D[Cont.]
S
/dt = 100A/µs)
4,748,103
5,045,903
5.38 (.212)
6.20 (.244)
1.65 (.065)
2.13 (.084)
2.87 (.113)
3.12 (.123)
Gate
Drain
Source
)
I
I
D
D
3
4
5 dv
Test Conditions
V
V
= I
= I
See MIL-STD-750 Method 3471
Starting T
device itself.
DD
DD
5,283,202
V
V
V
5,089,434
R
/
D[Cont.]
D[Cont.]
f = 1 MHz
V
dt
DS
GS
GS
G
GS
= 0.5 V
= 0.5 V
numbers reflect the limitations of the test circuit rather than the
= 0.6
= 25V
= 10V
= 15V
= 0V
TO-264 (L) Package Outline
j
@ 25°C
@ 25°C
Dimensions in Millimeters and (Inches)
= +25°C, L = 2.61mH, R
5,182,234
5,231,474
DSS
DSS
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
I
S
-
I
D
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
[
Cont.
5,019,522
5,434,095
]
5.79 (.228)
6.20 (.244)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
5.45 (.215) BSC
di
2.79 (.110)
3.18 (.125)
2-Plcs.
MIN
/
MIN
MIN
dt
5,262,336
5,528,058
700A/µs
G
19.51 (.768)
20.50 (.807)
= 25 , Peak I
4300
13.0
TYP
TYP
600
TYP
760
48
99
23
44
13
10
29
7
APT6017 B2LL - LLL
V
R
3.10 (.122)
3.48 (.137)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
V
DSS
MAX
0.25
MAX
MAX
140
L
1.3
40
35
8
= 35A
T
J
150
Amps
UNIT
UNIT
Volts
UNIT
°C/W
V/ns
nC
µC
pF
ns
ns
°
C

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