APT6017JFLL_04 ADPOW [Advanced Power Technology], APT6017JFLL_04 Datasheet - Page 2

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APT6017JFLL_04

Manufacturer Part Number
APT6017JFLL_04
Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer
ADPOW [Advanced Power Technology]
Datasheet
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
R
R
t
C
t
I
dv
C
C
V
Q
Q
E
E
Q
RRM
d(on)
d(off)
E
E
I
Q
SM
t
I
θJC
θJA
oss
SD
t
t
S
rr
iss
rss
/
on
off
on
off
gs
gd
r
f
rr
g
dt
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
10
S
S
S
-5
= -31A,
= -31A,
= -31A,
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.9
0.7
0.5
0.3
0.1
0.05
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
10
3
-4
dv
1
2
/
dt
(Body Diode)
(V
6
6
5
GS
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
S
10
= -31A)
SINGLE PULSE
-3
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
Test Conditions
DD
DD
dv
device itself.
I
I
D
D
I
I
D
D
/
= 400V, V
= 400V, V
dt
= 31A, R
= 31A, R
V
V
= 31A @ 25°C
= 31A @ 25°C
V
V
V
R
f = 1 MHz
V
DD
DD
numbers reflect the limitations of the test circuit rather than the
DS
GS
GS
T
T
T
T
T
T
G
GS
j
j
j
j
j
j
= 0.6Ω
= 300V
= 300V
= 25V
= 10V
= 15V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
10
= 0V
j
-2
= +25°C, L = 3.33mH, R
G
G
GS
GS
= 5Ω
= 5Ω
I
= 15V
= 15V
S
-
I
D
31A
di
Note:
/
dt
Peak T J = P DM x Z θJC + T C
MIN
MIN
MIN
10
≤ 700A/µs
Duty Factor D = t 1 / t
-1
G
t 1
= 25Ω, Peak I
4500
2.31
6.99
14.6
22.8
TYP
TYP
TYP
t 2
830
100
375
310
635
365
60
25
55
11
26
6
7
V
R
≤ 600V
2
MAX
MAX
MAX
0.33
APT6017JFLL
124
250
515
L
1.3
31
15
1.0
40
= 31A
T
J
≤ 150
Amps
Amps
UNIT
Volts
UNIT
UNIT
°C/W
V/ns
µC
nC
ns
pF
ns
µ
°
J
C

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