sdu01n60a SamHop Microelectronics Corp., sdu01n60a Datasheet - Page 2

• Manufacturer Part Number: sdu01n60a
• Description: 600v N-channel Planar Mosfet
• Manufacturer: SamHop Microelectronics Corp.

SDU/D01N60A
ELECTRICAL CHARACTERISTICS
Symbol
R
C
C
C
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
V
I
I
I
V
g
t
t r
t
t f
Q
Q
Q
I
V
I
/ T
DSS
GSSF
GSSR
D(ON)
D(OFF)
Notes :
S
a. Repetitive Rating Pulse width limited by maximum junction temperature.
b. VDD=50V, starting T
c. I
d. Pulse Test
SM
FS
(BR)DSS
DS(ON)
ISS
OSS
RSS
GS(th)
g
gs
gd
SD
V
(BR)DSS
SD
J
< 1A, di/dt < 100A/us, V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Output Capacitance
Gate-Source Charge
Gate-Drain("Miller") Charge
Breakdown Voltage Temperature
Coefficient
Drain-to-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Maximum Continuous Source Current(Body Diode)
Maximum Pulsed Source Current(Body Diode)
Drain-Source Diode Forward Voltage
Pulse width < 300us, Duty cycle < 2%.
J
=25
°
C,L=72mH, R
DD
< V
(BR)DSS
G
=25
( T
, T
A
J
Ω
=25 ° C unless otherwise noted )
Conditions
Reference to 25
I
V
V
V
V
V
V
I
R
V
V
V
V
V
V
f=1.0MHz
< 150
V
D
D
, I
DS
GS
GS
DS
DS
DS
DD
GS
DS
GS
GS
DS
G
=250uA
=1.1A
DS
=10 ohm,R
AS
=600V , V
=10V , I
=0V , I
=0V , V
=V
=15V , I
=25V,V
=300V
=300V,I
=10V
=10V
=0V,I
=0V , V
=1A
GS
°
2
C
S
, I
D
d
=0.55A
d
GS
=250uA
GS
D
GS
D
D
D
=250uA
=0.55A
=0.55A
=1.1A,
GS
=30V
=-30V
=0V
D
=0V
=300 ohm
°
C,
d
d
d
Min
600
2.0
www.samhop.com.tw
Typ
169
0.6
9.1
6.2
0.9
3.5
25
27
17
35
2
-100
Max
100
1.1
1.5
4.4
20
4.0
9.3
10
Jul,22,2009
Preliminary
Units
ohm
V/
uA
nA
nA
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
A
A
V
V
V
S
° C