cxm3543aer Sony Electronics, cxm3543aer Datasheet

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cxm3543aer

Manufacturer Part Number
cxm3543aer
Description
3p10t Antenna Switch For Gsm/umts Dual Mode Phones
Manufacturer
Sony Electronics
Datasheet
3P10T Antenna Switch for GSM/UMTS Dual Mode Phones
Description
Features
Package
Structure
The CXM3543AER is 3P10T anntena switch for quad bands GSM and quad bands UMTS dual mode.
This IC has a decoder circuit which supports CMOS control.
Sony JPHEMT GaAs process is utilized for low insertion loss and high linearity.
(Applications: Quad bands GSM and quad bands UMTS dual mode phones)
GaAs Junction Gate pHEMT (JPHEMT) MMIC Switch, CMOS Decoder
This IC is ESD sensitive device. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license
by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating
the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
VQFN-34P (3.8mm × 4.4mm × 0.85mm Max.)
Low insertion loss
Low voltage drive: 2.5 to 3.3V
Supports CMOS control
High ESD resistance
Eliminates Output DC Blocking Capacitors to RF ports
Small package: VQFN-34P (3.8mm × 4.4mm × 0.85mm Max.)
Lead-Free and RoHS Compliant
- 1 -
CXM3543AER
E09701

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cxm3543aer Summary of contents

Page 1

... Antenna Switch for GSM/UMTS Dual Mode Phones Description The CXM3543AER is 3P10T anntena switch for quad bands GSM and quad bands UMTS dual mode. This IC has a decoder circuit which supports CMOS control. Sony JPHEMT GaAs process is utilized for low insertion loss and high linearity. ...

Page 2

Absolute Maximum Ratings Supply voltage Control voltage Maximum input Operating temperature Storage temperature DC Bias Conditions ° (Ta = –30 to +85 C) Item Min. V 2.5 DD Vctl (H) 1.5 Vctl ( Vctl [GSM Tx1] [GSM ...

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Block Diagram F27 Ant1 Ant2 F28 F33 Ext F34 F29 F1 F2 F20 F3 F4 F21 F10 F11 F7 F8 F22 F41 F12 F23 F13 F14 F24 F15 F16 F42 F17 F25 F18 F26 F19 - 3 ...

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Pin Configuration GND 18 Tx1 19 GND 20 GND 21 GSM850Rx 22 GSM900Rx 23 GSM1800Rx 24 GSM1900Rx 25 GND VQFN-34P PKG (3.8mm × 4.4mm × 0.85mm Max.) Top View 28 ...

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Truth Table GSM/ GSM GSM GSM UMTS UMTS UMTS BAND1 BAND2 Rx/Tx BAND1 BAND2 State CTLA CTLB CTLC CTLD CTLE CTLF CTLG Active Port Active Ant — — — ...

Page 6

Electrical Characteristics 1 ° ( Item Freq [MHz] Bias current — Ctrl current 1 — Ctrl current 2 — Wake up time — Switching speed — UMTS800M (V = 2.9V, Vctl = 0/2.9V, Pin = 26dBm) DD ...

Page 7

UMTS1. 2.9V, Vctl = 0/2.9V, Pin = 26dBm) DD Item Freq [MHz] Insertion loss 1428 to 1448 * Mounted 1476 to 1496 recommended circuit 1428 to 1448 VSWR 1476 to 1496 1428 to 1448 SW isolation 1476 to ...

Page 8

UMTS1. 2.9V, Vctl = 0/2.9V, Pin = 26dBm) DD Item Freq [MHz] Insertion loss 1750 to 1785 * Mounted 1845 to 1880 recommended circuit 1750 to 1785 VSWR 1845 to 1880 1750 to 1785 SW isolation 1845 to ...

Page 9

UMTS2G (V = 2.9V, Vctl = 0/2.9V, Pin = 26dBm) DD Item Freq [MHz] Insertion loss 1920 to 1980 * Mounted 2110 to 2170 recommended circuit 1920 to 1980 VSWR 2110 to 2170 1920 to 1980 SW isolation 2110 to ...

Page 10

GSM Tx1 (V = 2.9V, Vctl = 0/2.9V, Pin = 35dBm) DD Item Freq [MHz] Insertion loss 824 to 915 * Mounted recommended circuit VSWR 824 to 915 SW isolation 824 to 915 Isolation Tx ⇒ Rx 824 to 915 ...

Page 11

GSM Tx1 (V = 2.9V, Vctl = 0/2.9V, Pin = 35dBm) DD Item Freq [MHz] 1648 to 1830 2472 to 2745 3296 to 3660 4120 to 4575 4944 to 5490 5768 to 6405 6592 to 7320 Harmonics 7416 to 8235 ...

Page 12

GSM Tx2 (V = 2.9V, Vctl = 0/2.9V, Pin = 32dBm) DD Item Freq [MHz] Insertion loss 1710 to 1785 * Mounted 1850 to 1910 recommended circuit 1710 to 1785 VSWR 1850 to 1910 1710 to 1785 SW isolation 1850 ...

Page 13

GSM Tx2 (V = 2.9V, Vctl = 0/2.9V, Pin = 32dBm) DD Item Freq [MHz] 3420 to 3570 3700 to 3820 5130 to 5355 5550 to 5730 6840 to 7140 Harmonics 7400 to 7640 8550 to 8925 9250 to 9550 ...

Page 14

GSM850Rx (V = 2.9V, Vctl = 0/2.9V, Pin = 0dBm) DD Item Freq [MHz] Insertion loss 869 to 894 * Mounted recommended circuit VSWR 869 to 894 GSM900Rx (V = 2.9V, Vctl = 0/2.9V, Pin = 0dBm) DD Item Freq ...

Page 15

Electrical Characteristics 2 ° (Ta = –30 to +85 C) Item Freq [MHz] Bias current Ctrl current 1 Ctrl current 2 Wake up time Switching speed UMTS800M (V = 2.9V, Vctl = 0/2.9V, Pin = 26dBm) DD Item Freq [MHz] ...

Page 16

UMTS1. 2.9V, Vctl = 0/2.9V, Pin = 26dBm) DD Item Freq [MHz] Insertion loss 1428 to 1448 * Mounted 1476 to 1496 recommended circuit 1428 to 1448 VSWR 1476 to 1496 1428 to 1448 SW isolation 1476 to ...

Page 17

UMTS1. 2.9V, Vctl = 0/2.9V, Pin = 26dBm) DD Item Freq [MHz] Insertion loss 1750 to 1785 * Mounted 1845 to 1880 recommended circuit 1750 to 1785 VSWR 1845 to 1880 1750 to 1785 SW isolation 1845 to ...

Page 18

UMTS2G (V = 2.9V, Vctl = 0/2.9V, Pin = 26dBm) DD Item Freq [MHz] Insertion loss 1920 to 1980 * Mounted 2110 to 2170 recommended circuit 1920 to 1980 VSWR 2110 to 2170 1920 to 1980 SW isolation 2110 to ...

Page 19

GSM Tx1 (V = 2.9V, Vctl = 0/2.9V, Pin = 35dBm) DD Item Freq [MHz] Insertion loss 824 to 915 * Mounted recommended circuit VSWR 824 to 915 SW isolation 824 to 915 Isolation Tx ⇒ Rx 824 to 915 ...

Page 20

GSM Tx1 (V = 2.9V, Vctl = 0/2.9V, Pin = 35dBm) DD Item Freq [MHz] 1648 to 1830 2472 to 2745 3296 to 3660 4120 to 4575 4944 to 5490 5768 to 6405 6592 to 7320 Harmonics 7416 to 8235 ...

Page 21

GSM Tx2 (V = 2.9V, Vctl = 0/2.9V, Pin = 32dBm) DD Item Freq [MHz] Insertion loss 1710 to 1785 * Mounted 1850 to 1910 recommended circuit 1710 to 1785 VSWR 1850 to 1910 1710 to 1785 SW isolation 1850 ...

Page 22

GSM Tx2 (V = 2.9V, Vctl = 0/2.9V, Pin = 32dBm) DD Item Freq [MHz] 3420 to 3570 3700 to 3820 5130 to 5355 5550 to 5730 6840 to 7140 Harmonics 7400 to 7640 8550 to 8925 9250 to 9550 ...

Page 23

GSM850Rx (V = 2.9V, Vctl = 0/2.9V, Pin = 0dBm) DD Item Freq [MHz] Insertion loss 869 to 894 * Mounted recommended circuit VSWR 869 to 894 GSM900Rx (V = 2.9V, Vctl = 0/2.9V, Pin = 0dBm) DD Item Freq ...

Page 24

Recommended Circuit 18 Tx1 GSM850Rx 22 GSM900Rx 23 GSM1800Rx 24 GSM1900Rx (Cbypass) ∗ 1 When the DC level of the connected device is GND or open blocking capacitors are required. ...

Page 25

... Evaluation Board The board as shown below is used for the CXM3543AER characteristics measurement. <Layer structure> <Surface layer pattern (Device-mounted area)> UMTS1.5G UMTS1.5G UMTS1.5G UMTS1.7G UMTS1.7G UMTS1.7G UMTS2G UMTS2G UMTS2G UMTS800M UMTS800M UMTS800M Surface layer (48µm) Core material GND (18µm) Prepreg GND (18µm) Core material Rear face (48µ ...

Page 26

Package Outline (Unit: mm) LEAD PLATING SPECIFICATIONS ITEM LEAD MATERIAL SOLDER COMPOSITION PLATING THICKNESS - 26 - SPEC. COPPER ALLOY Sn-Bi Bi:1-4wt% 5-18µm Sony Corporation ...

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