k4x51163pe Samsung Semiconductor, Inc., k4x51163pe Datasheet - Page 16
k4x51163pe
Manufacturer Part Number
k4x51163pe
Description
32mx16 Mobile Ddr Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4X51163PE.pdf
(20 pages)
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K4X51163PE - L(F)E/G
17. AC Overshoot/Undershoot Specification for Address & Control Pins
18. AC Overshoot/Undershoot Specification for CLK, DQ, DQS and DM Pins
Volts
Volts
(V)
(V)
Figure 8. AC Overshoot and Undershoot Definition for CLK, DQ, DQS and DM Pins
VDD
VDDQ
VSSQ
VSS
Maximum peak Amplitude allowed for undershoot area
Figure 7. AC Overshoot and Undershoot Definition for Address and Control Pins
Maximum peak Amplitude allowed for undershoot area
Maximum peak Amplitude allowed for overshoot area
Maximum peak Amplitude allowed for overshoot area
Maximum undershoot area below VSSQ
Maximum overshoot area above VDDQ
Maximum undershoot area below VSS
Maximum overshoot area above VDD
Parameter
Parameter
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
Time (ns)
Time (ns)
- 19 -
Undershoot Area
Undershoot Area
Overshoot Area
Overshoot Area
Mobile DDR SDRAM
Specification
Specification
3V-ns
3V-ns
3V-ns
3V-ns
0.9V
0.9V
0.9V
0.9V
June 2007