k4x56323pg Samsung Semiconductor, Inc., k4x56323pg Datasheet - Page 13

• Manufacturer Part Number: k4x56323pg
• Description: 8m X32 Mobile-ddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4X56323PG - 7(8)E/G
AC Timming Parameters & Specifications
Clock cycle time
Row cycle time
Row active time
RAS to CAS delay
Row precharge time
Row active to Row active delay
Write recovery time
Last data in to Active delay
Last data in to Read command
Col. address to Col. address delay
Clock high level width
Clock low level width
DQ Output data access time from CK/
CK
DQS Output data access time from
CK/CK
Data strobe edge to ouput data edge
Read Preamble
Read Postamble
CK to valid DQS-in
DQS-in setup time
DQS-in hold time
DQS-in high level width
DQS-in low level width
DQS falling edge to CK setup time
DQS falling edge hold time from CK
DQS-in cycle time
Address and Control Input setup time
Address and Control Input hold time
Address & Control input pulse width
DQ & DM setup time to DQS
DQ & DM hold time to DQS
DQ & DM input pulse width
DQ & DQS low-impedence time from CK/CK
DQ & DQS high-impedence time from CK/CK
DQS write postamble time
DQS write preamble time
Parameter
CL=2
CL=3
CL=2
CL=3
CL=2
CL=3
CL=2
CL=3
tWPRES
tWPREH
tDQSCK
Symbol
tDQSQ
tDQSH
tWPST
tWPRE
tRPRE
tDQSS
tCDLR
tRPST
tDQSL
tDIPW
tRCD
tRRD
tCCD
tRAS
tDSS
tDSH
tDSC
tDAL
tIPW
tWR
tRC
tCH
tDH
tCK
tRP
tCL
tAC
tDS
tHZ
tLZ
tIH
tIS
2tCK+tRP
12.0
67.5
22.5
22.5
0.45
0.45
0.75
0.25
0.25
Min
7.5
0.5
0.9
0.4
0.4
0.4
0.2
0.2
0.9
1.3
1.3
2.6
0.8
0.8
1.8
1.0
0.4
45
15
15
1
1
2
2
2
2
0
DDR266
70,000
Max
0.55
0.55
1.25
0.6
1.1
1.1
0.6
0.6
0.6
1.1
6.0
0.6
8
6
8
6
2tCK+tRP
Mobile-DDR SDRAM
15.0
0.45
0.45
0.75
0.25
0.25
Min
9.0
2.5
2.5
2.5
2.5
0.5
0.9
0.4
0.4
0.4
0.2
0.2
0.9
1.5
1.5
3.0
1.1
1.1
2.4
1.0
0.4
81
54
27
27
15
15
1
1
0
DDR222
70,000
Max
0.55
0.55
1.25
0.7
1.1
1.1
0.6
0.6
0.6
1.1
7.0
0.6
8
6
8
6
January 2006
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
Note
5,6
5,6
2
3
4
1
1
1