k7r321882c Samsung Semiconductor, Inc., k7r321882c Datasheet - Page 11

• Manufacturer Part Number: k7r321882c
• Description: 1mx36-bit, 2mx18-bit, 4mx9-bit Qdrtm Ii B2 Sram
• Manufacturer: Samsung Semiconductor, Inc.

K7R323682C
K7R320982C
K7R321882C
OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Notes: 1. Minimum cycle. I
ABSOLUTE MAXIMUM RATINGS*
*Note: 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
Input Leakage Current
Output Leakage Current
Operating Current (x36)
Operating Current (x18)
Operating Current (x9)
Standby Current (NOP)
Output High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Input Low Voltage
Input High Voltage
Voltage on V
Voltage on V
Voltage on Input Pin Relative to V
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
Supply Voltage
Reference Voltage
10. V
2. V
2. |I
3. |I
4. Minimum Impedance Mode when ZQ pin is connected to V
5. Operating current is calculated with 50% read cycles and 50% write cycles.
6. Standby Current is only after all pending read and write burst operations are completed.
7. Programmable Impedance Mode.
8. These are DC test criteria. DC design criteria is V
9. V
PARAMETER
only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DDQ
OH
OL
IL
IH
|=(V
(Min.) DC=
|=(V
(Max)DC=
must not exceed V
DD
DDQ
PARAMETER
DDQ
DDQ
Supply Relative to V
Supply Relative to V
/2)/(RQ/5)±15% for 175Ω ≤ RQ ≤ 350Ω.
/2)/(RQ/5)±15% for 175Ω ≤ RQ ≤ 350Ω.
-
V
0.3V, V
DDQ
OUT
=0mA.
+0.3, V
IL
SYMBOL
DD
(Min.) AC=-1.5V(pulse width ≤ 3ns).
PARAMETER
V
V
V
V
I
V
I
I
I
I
V
SB1
during normal operation.
I
OH1
OH2
OL
CC
CC
CC
OL1
OL2
IL
IH
IH
IL
SS
(Max)AC=
SS
SS
V
Output Disabled,
V
Cycle Time ≥ t
V
Cycle Time ≥ t
V
Cycle Time ≥ t
Device deselected, I
All Inputs
I
I
OH
OL
DD
DD
DD
DD
=1.0mA
=-1.0mA
=Max; V
=Max, I
=Max, I
=Max, I
V
DDQ
Commercial / Industrial
+0.85V(pulse width ≤ 3ns).
≤
0.2V or ≥ V
OUT
OUT
OUT
REF
IN
1Mx36 & 2Mx18 & 4Mx9 QDR
TEST CONDITIONS
SYMBOL
=V
KHKH
KHKH
KHKH
±50mV. The AC V
=0mA
=0mA
=0mA
V
V
V
SS
DDQ
REF
DD
to V
Min
Min.
Min.
DD
OUT
.
DD
DDQ
=0mA, f=Max,
- 11 -
-0.2V
IH
/V
IL
levels are defined separately for measuring timing parameters.
SYMBOL
V
T
T
T
0.68
Min
V
1.7
1.4
V
BIAS
DDQ
OPR
STG
-30
-25
-20
-30
-25
-20
-30
-25
-20
-30
-25
-20
DD
IN
V
V
DDQ
DDQ
V
V
DDQ
REF
MIN
V
-0.3
-2
-2
/2-0.12 V
/2-0.12 V
-
-
-
-
-
-
-
-
-
-
-
-
SS
+0.1
-0.2
0 to 70 / -40 to 85
-0.5 to V
Rev. 1.1 August 2006
-0.5 to V
-0.5 to 2.9
-65 to 150
MAX
0.95
-10 to 85
RATING
1.9
1.9
DDQ
DDQ
V
V
DD+
DDQ
REF
TM
V
MAX
850
800
750
800
750
700
750
700
650
350
330
300
DD
0.2
+2
+2
/2+0.12
/2+0.12
DDQ
0.3
+0.3
-0.1
II b2 SRAM
UNIT NOTES
mA
mA
mA
mA
µA
µA
UNIT
V
V
V
V
V
V
V
V
V
UNIT
°C
°C
°C
V
V
V
8,10
1,5
1,5
1,5
1,6
2,7
3,7
8,9
4
4