h5ps2g43afr Hynix Semiconductor, h5ps2g43afr Datasheet - Page 21

• Manufacturer Part Number: h5ps2g43afr
• Description: Ddr2 Sdram
• Manufacturer: Hynix Semiconductor

Rev. 0.1 / November 2008
4. Electrical Characteristics & AC Timing Specification
(T
Refresh Parameters by Device Density
Note:
1: If refresh timing is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be
executed.
2. This is an optional feature. For detailed information, please refer to “operating temperature condition” in this data sheet.
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Note:
1. 8 bank device Precharge All Allowance: tRP for a Precharge All command for an 8 Bank device will equal to tRP+1*tCK, where tRP
are the values for a single bank Precharge, which are shown in the table above.
2. Refer to Specific Notes 32.
3. Refer to Specific Notes 3.
OPER
Refresh to Active/Refresh
Bin(CL-tRCD-tRP)
Average periodic
refresh interval
CAS Latency
; V
command time
Parameter
Parameter
Speed
DDQ
tRCD
tRP
tRAS
tRC
*1
= 1.8 +/- 0.1V; V
tREFI
DD
5-5-5
12.5
12.5
57.5
min
45
5
= 1.8 +/- 0.1V)
0 ℃≤ T
85℃＜ T
DDR2-800
Symbol
tRFC
CASE
CASE
6-6-6
≤ 85℃
≤ 95℃
min
15
15
45
60
6
256Mb 512Mb 1Gb
7.8
3.9
75
4-4-4
min
12
12
45
57
4
105
7.8
3.9
DDR2-667
127.5
7.8
3.9
5-5-5
2Gb
min
195
7.8
3.9
15
15
45
60
5
327.5
H5PS2G43AFR
H5PS2G83AFR
4Gb Units Notes
7.8
3.9
Units
tCK
ns
ns
ns
ns
ns
us
us
Notes
2,3
1,2
2
2
2
1
1
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