h55s1g32mfp-60 Hynix Semiconductor, h55s1g32mfp-60 Datasheet - Page 10

• Manufacturer Part Number: h55s1g32mfp-60
• Description: 32mx32bit Mobile Sdram
• Manufacturer: Hynix Semiconductor

DC CHARACTERISTICS II
Notes :
1. I
2. See the tables of next page for more specific I
3. Please contact Hynix office for more information and ability for DPD operation.
Rev 1.2 / Jun. 2008
Current
Current
Mode
Mode
Mode
Active Standby Current
Active Standby Current
Operating Current
Precharge Standby
in Power Down Mode
Precharge Standby
in Non Power Down
in Power Down Mode
in Non Power Down
Burst Mode Operating
Current
Auto Refresh Current
Self Refresh Current
Standby Current in
Deep Power Down
Deep Power Down operation is a hynix optional function.
DD1
Parameter
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
IDD1
IDD2P
IDD2PS
IDD2N
IDD2NS
IDD3P
IDD3PS
IDD3N
IDD4
IDD5
IDD6
IDD7
Symbol
IDD3NS
t
= min
during
= 15ns
during
See the Page for
“Deep Power Down Mode”
CKE ≥ V
Input signals are changed one time
CKE ≥ V
Input signals are changed one time
Burst length=1, One bank active
t
CKE ≤ V
CKE ≤ V
2clks.
All other pins ≥ V
CKE ≥ V
Input signals are stable.
CKE ≤ V
CKE ≤ V
2clks.
All other pins ≥ V
CKE ≥ V
Input signals are stable.
t
All banks active
RFC
CKE ≤ 0.2V
RC
CK
(T
≥ t
≥ t
≥ t
A
CK
RC
= -30 to 85
RFC
IH
DD6
IH
IL
IL
IH
IL
IL
IH
(min), I
(min), I
Test Condition
(max), t
(max), t
(max), t
(max), t
(min), CS ≥ V
(min), CS ≥ V
(min), t
(min), t
(min)
current values.
OL
OL
DD
DD
CK
CK
CK
CK
CK
CK
=0mA
=0mA
o
-0.2V or ≤ 0.2V
-0.2V or ≤ 0.2V
= min
= min
C)
= ∞
= ∞
= ∞
= ∞
IH
IH
(min), t
(min), t
1Gbit (32Mx32bit) Mobile SDR Memory
CK
CK
166MHz 133MHz 105MHz
90
70
See Next Page
Speed
H55S1G(2/3)2MFP Series
120
0.4
0.4
10
10
5
2
3
2
5
80
60
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
11
1
1
2
3
10