si7501dn-t1 Vishay, si7501dn-t1 Datasheet - Page 4
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si7501dn-t1
Manufacturer Part Number
si7501dn-t1
Description
Complementary 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI7501DN-T1.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7501dn-t1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7501dn-t1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7501DN
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.2
−0.4
0.6
0.4
0.2
0.0
30
10
1
−50
0.0
−25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
0.4
T
T
− Source-to-Drain Voltage (V)
Threshold Voltage
J
J
= 150_C
− Temperature (_C)
25
0.6
I
D
50
= 250 mA
0.8
75
1.0
0.01
100
100
T
0.1
10
J
1
= 25_C
0.1
1.2
125
*
Limited by r
*V
Limited
GS
I
D(on)
Single Pulse
T
A
u minimum V
150
1.4
= 25_C
V
DS
DS(on)
Safe Operating Area
− Drain-to-Source Voltage (V)
1
GS
BV
at which r
DSS
Limited
DS(on)
10
0.16
0.12
0.08
0.04
0.00
50
40
30
20
10
I
0
is specified
DM
10
0
−3
Limited
On-Resistance vs. Gate-to-Source Voltage
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
10
100
I
2
D
−2
= 6.4 A
V
GS
− Gate-to-Source Voltage (V)
Single Pulse Power
10
−1
4
Time (sec)
1
S-51129—Rev. C, 13-Jun-05
Document Number: 72173
6
P−CHANNEL
10
8
100
600
10