hmc566lp4e Hittite Microwave Corporation, hmc566lp4e Datasheet

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hmc566lp4e

Manufacturer Part Number
hmc566lp4e
Description
Gaas Phemt Mmic Low Noise Amplifier, 28 - 36 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HMC566LP4E
Manufacturer:
mini
Quantity:
5 000
Part Number:
hmc566lp4eTR
Manufacturer:
Microsemi
Quantity:
1 400
8 - 190
8
Typical Applications
The HMC566LP4E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd1+Idd2+Idd3+Idd4)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v02.0609
= +25° C, Vdd 1, 2, 3, 4 = +3V
Order On-line at www.hittite.com
Min.
18
50
28 - 31.5
Typ.
0.03
23.5
2.8
82
21
14
11
13
8
Max.
106
3.6
Features
Low Noise Figure: 2.8 dB
High Gain: 21 dB
High OIP3: +24 dBm
Single Positive Supply: +3V @ 82 mA
50 Ohm Matched & DC Blocked I/Os
24 Lead 4x4mm QFN Package: 16mm2
General Description
The HMC566LP4E is a high dynamic range GaAs
pHEMT MMIC Low Noise Amplifi er (LNA) in a
4x4 mm SMT package which operates from 28 to
36 GHz. The HMC566LP4E provides 21 dB of small
signal gain, 2.8 dB of noise fi gure and output IP3 of
24 dBm. This self-biased LNA is ideal for hybrid and
MCM assemblies due to its compact size, single
+3V supply operation, and DC blocked RF I/O’s.
The RoHS packaged HMC566LP4E eliminates the
need for wirebonding and allows the use of high
volume surface mount manufacturing techniques.
The HMC566LP4E is also available in chip form as
the HMC566.
GaAs pHEMT MMIC LOW NOISE
Min.
19.5
50
31.5 - 33.5
Typ.
22.5
0.03
24.5
2.8
82
18
10
12
14
AMPLIFIER, 28 - 36 GHz
Max.
106
3.6
HMC566LP4E
Min.
18
50
33.5 - 36
Typ.
0.03
24.5
3.3
82
21
12
11
13
7
Max.
106
4.3
dB/ °C
Units
dBm
dBm
dBm
GHz
mA
dB
dB
dB
dB

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hmc566lp4e Summary of contents

Page 1

... MCM assemblies due to its compact size, single +3V supply operation, and DC blocked RF I/O’s. The RoHS packaged HMC566LP4E eliminates the need for wirebonding and allows the use of high volume surface mount manufacturing techniques. The HMC566LP4E is also available in chip form as the HMC566 +25° C, Vdd +3V A Min ...

Page 2

... Output Return Loss vs. Temperature 0 -5 -10 -15 - Reverse Isolation vs. Temperature 0 -10 -20 -30 -40 -50 -60 - Order On-line at www.hittite.com HMC566LP4E + FREQUENCY (GHz) + FREQUENCY (GHz) + ...

Page 3

... Channel Temperature 7 Continuous Pdiss (T= 85 °C) 6 (derate 9.6 mW/°C above 85 °C) 5 Thermal Resistance 4 (channel to ground paddle) 3 Noise Figure Storage Temperature 2 1 Operating Temperature 0 3 3.5 Order On-line at www.hittite.com HMC566LP4E AMPLIFIER GHz + FREQUENCY (GHz) ...

Page 4

... GaAs pHEMT MMIC LOW NOISE AMPLIFIER GHz Description This pins and exposed ground paddle must be connected to RF/DC ground. This pin is AC coupled and matched to 50 Ohms. No Connection This pin is AC coupled and matched to 50 Ohms. Order On-line at www.hittite.com HMC566LP4E 8 Interface Schematic 8 - 193 ...

Page 5

... PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Body Material RoHS-compliant Low Stress Injection Molded Plastic Order On-line at www.hittite.com HMC566LP4E AMPLIFIER GHz [1] Lead Finish Package Marking H566 ...

Page 6

... A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. Order On-line at www.hittite.com HMC566LP4E 195 ...

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