hmc589st89 Hittite Microwave Corporation, hmc589st89 Datasheet - Page 5
hmc589st89
Manufacturer Part Number
hmc589st89
Description
Ingap Hbt Gain Block Amplifier Smt, Dc - 4 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet
1.HMC589ST89.pdf
(6 pages)
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5 - 158
5
Pin Descriptions
Application Circuit
Recommended Bias Resistor Values
for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc
Recommended Component Values for Key Application Frequencies
Supply Voltage (Vs)
R
R
Pin Number
BIAS
BIAS
2, 4
Component
V
P
1
3
ALUE
OWER
C1, C2
L1
R
ATING
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Function
OUT
GND
IN
0.01 μF
270 nH
50
1.8 Ω
1
/
5V
8
W
RF output and DC Bias (Vcc) for the output stage.
13 Ω
¼ W
100 pF
56 nH
6V
v02.0907
An off chip DC blocking capacitor is required.
900
Order On-line at www.hittite.com
must be connected to RF/DC ground.
These pins and package bottom
This pin is DC coupled.
38 Ω
½ W
8V
100 pF
Description
24 nH
1900
Frequency (MHz)
Note:
1. External blocking capacitors are required on
2. R
HMC589ST89 / 589ST89E
RFIN and RFOUT.
100 pF
24 nH
2200
BIAS
MMIC AMPLIFIER, DC - 4 GHz
provides DC bias stability over temperature.
InGaP HBT GAIN BLOCK
100 pF
15 nH
2400
Interface Schematic
100 pF
8.2 nH
3500
100 pF
8.2 nH
4000