hmc580st89 Hittite Microwave Corporation, hmc580st89 Datasheet - Page 5

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hmc580st89

Manufacturer Part Number
hmc580st89
Description
Ingap Hbt Gain Block Smt, Dc - 1 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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5 - 152
5
Pin Descriptions
Application Circuit
Recommended Bias Resistor Values
for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc, Vs > +5V
Recommended Component Values for Key Application Frequencies with Vs = +5V
Supply Voltage (Vs)
R
R
Pin Number
BIAS
BIAS
2, 4
V
P
1
3
ALUE
OWER
Component
C1, C2
Rbias
R
L1
ATING
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Function
OUT
GND
IN
0.01 μF
0 Ohms
270 nH
50
13 Ω
¼ W
6V
RF output and DC Bias (Vcc) for the output stage.
v03.0907
An off chip DC blocking capacitor is required.
Order On-line at www.hittite.com
must be connected to RF/DC ground.
These pins and package bottom
36 Ω
½ W
This pin is DC coupled.
8V
1.5 Ohms
110 nH
820 pF
250
Description
Frequency (MHz)
Note:
1. External blocking capacitors are required on
2. R
HMC580ST89 / 580ST89E
RFIN and RFOUT.
1.5 Ohms
820 pF
110 nH
BIAS
400
MMIC AMPLIFIER, DC - 1 GHz
provides DC bias stability over temperature.
InGaP HBT GAIN BLOCK
1.8 Ohms
100 pF
56 nH
900
Interface Schematic

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