hmc594lc3b Hittite Microwave Corporation, hmc594lc3b Datasheet - Page 4
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hmc594lc3b
Manufacturer Part Number
hmc594lc3b
Description
Low Noise Amplifier Smt, 2 - 4 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet
1.HMC594LC3B.pdf
(6 pages)
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Absolute Maximum Ratings
Outline Drawing
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +6.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 10 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
7 Vdc
+15 dBm
150 °C
0.65 W
100 °C/W
-65 to +150 °C
-40 to +85 °C
v00.0307
Order On-line at www.hittite.com
Typical Supply Current vs. Vdd
Note: Amplifi er will operate over full voltage range shown above
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER Ni.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
GaAs PHEMT MMIC LOW NOISE
TO PCB RF GROUND.
Vdd (V)
+5.5
+6.0
+6.5
AMPLIFIER, 2 - 4 GHz
HMC594LC3B
Idd (mA)
100
103
97
4 - 201
4