upg101p Renesas Electronics Corporation., upg101p Datasheet
upg101p
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upg101p Summary of contents
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DESCRIPTION P PG100P and P PG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. P PG100P is low noise amplifier from 50 MHz to 3 GHz and P PG101P is a medium ...
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ELECTRICAL CHARACTERISTICS (T P PG100P ( ð CHARACTERISTICS SYMBOL Drain Current I DD Gate Current I GG Power Gain Gp Gain Flatness ' Gp Noise Figure NF Input Return Loss RL in ...
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Fig Pin Ceramic Package 1.27 0.1 1.27 0.1 4–0.6 4–0 3.8 0.2 10.6 MAX PG100P PG101P 1 1.7 MAX. +0.05 0.2 –0.02 3 ...
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TYPICAL CHARACTERISTICS P PG100P ( ð POWER GAIN AND NOISE FIGURE vs. FREQUENCY T = – ...
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P PG101P ( ð POWER GAIN AND NOISE FIGURE vs. FREQUENCY – ...
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CHIP DIMENSIONS (Unit : mm) P PG100P PG101P 1.3 Bonding Pad Size: 100 1.3 Bonding Pad Size: ...
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RECOMMENDED CHIP ASSEMBLY CONDITIONS Die Attachment Atmosphere : N gas 2 Temperature : 320 r5 °C AuSn Preform : 0.5 u 0.5 u 0.05 * The hard solder such as AuSi or AuGe which has higher melting point than AuSn ...
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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC ...