upa2803 Renesas Electronics Corporation., upa2803 Datasheet
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upa2803
Manufacturer Part Number
upa2803
Description
Switching N-channel Power Mosfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2803.pdf
(7 pages)
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Part Number:
upa2803T1L-E1-AY
Manufacturer:
NEC
Quantity:
20 000
Document No. G19569EJ1V0DS00 (1st edition)
Date Published December 2008 NS
Printed in Japan
FEATURES
• Low on-state resistance
• Built-in gate protection diode
• Thin type surface mount package with heat spreader
• RoHS Compliant
ABSOLUTE
connected.)
THERMAL RESISTANCE
Channel to Ambient Thermal Resistance
Channel to Case (Drain) Thermal Resistance
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
DESCRIPTION
management applications of portable equipments.
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation (PW = 10 sec)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
The
R
R
DS(on)1
DS(on)2
μ
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting T
PA2803 is N-channel MOSFET designed for DC/DC converter and power
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
= 5.8 mΩ MAX. (V
= 9.5 mΩ MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MAXIMUM
μ
ch
s, Duty Cycle ≤ 1%
Note1
= 25°C, V
Note2
Note3
Note3
DS
GS
GS
GS
= 0 V)
= 0 V)
= 4.5 V, I
= 2.5 V, I
DD
RATINGS (T
= 10 V, R
N-CHANNEL POWER MOSFET
Note2
D
D
Note2
= 20 A)
= 10 A)
G
DATA SHEET
= 25 Ω, V
R
R
I
I
P
P
V
V
T
T
I
E
D(DC)
D(pulse)
A
AS
th(ch-A)
th(ch-C)
ch
stg
SWITCHING
DSS
GSS
T1
T2
AS
= 25°C, All terminals are
GS
MOS FIELD EFFECT TRANSISTOR
= 12 → 0 V, L = 100
−55 to +150
83.3
±12
±20
±80
150
2.4
1.5
3.8
20
20
40
°C/W
°C/W
mJ
°C
°C
W
W
V
V
A
A
A
μ
H
0.4±0.1
PACKAGE DRAWING (Unit: mm)
EQUIVALENT CIRCUIT
μ
Gate
Gate
Protection
Diode
1
2
3
4
0.2
PA2803
3.3±0.15
3.0±0.1
1.75±0.1
0.35
Source
Drain
0.4±0.1
8
7
6
5
Body
Diode
1, 2, 3
4
5, 6, 7, 8: Drain
2008
: Source
: Gate
0.10 S