upa2803 Renesas Electronics Corporation., upa2803 Datasheet

upa2803

Manufacturer Part Number

upa2803

Description

Switching N-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2803.pdf (7 pages)

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Quantity

Price

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Document No. G19569EJ1V0DS00 (1st edition)

Date Published December 2008 NS

Printed in Japan

FEATURES

• Low on-state resistance

• Built-in gate protection diode

• Thin type surface mount package with heat spreader

• RoHS Compliant

ABSOLUTE

connected.)

THERMAL RESISTANCE

Channel to Ambient Thermal Resistance

Channel to Case (Drain) Thermal Resistance

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

DESCRIPTION

management applications of portable equipments.

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW = 10 sec)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10

The

DS(on)1

DS(on)2

2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt

3. Starting T

PA2803 is N-channel MOSFET designed for DC/DC converter and power

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

= 5.8 mΩ MAX. (V

= 9.5 mΩ MAX. (V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

MAXIMUM

s, Duty Cycle ≤ 1%

Note1

= 25°C, V

Note2

Note3

= 0 V)

= 4.5 V, I

= 2.5 V, I

RATINGS (T

= 10 V, R

N-CHANNEL POWER MOSFET

Note2

= 20 A)

= 10 A)

DATA SHEET

= 25 Ω, V

D(DC)

D(pulse)

th(ch-A)

th(ch-C)

stg

SWITCHING

DSS

GSS

= 25°C, All terminals are

MOS FIELD EFFECT TRANSISTOR

= 12 → 0 V, L = 100

−55 to +150

83.3

±12

±20

±80

150

2.4

1.5

3.8

°C/W

°C

0.4±0.1

PACKAGE DRAWING (Unit: mm)

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.2

PA2803

3.3±0.15

3.0±0.1

1.75±0.1

0.35

Source

Drain

0.4±0.1

Body

Diode

1, 2, 3

5, 6, 7, 8: Drain

2008

: Source

: Gate

0.10 S

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