upa2800 Renesas Electronics Corporation., upa2800 Datasheet

upa2800

Manufacturer Part Number

upa2800

Description

Switching N-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2800.pdf (6 pages)

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Document No. G19288EJ1V0DS00 (1st edition)

Date Published May 2008 NS

Printed in Japan

FEATURES

• Low on-state resistance

• Built-in gate protection diode

• Thin type surface mount package with heat spreader

• RoHS Compliant

ABSOLUTE

connected.)

THERMAL RESISTANCE

Channel to Ambient Thermal Resistance

Channel to Case (Drain) Thermal Resistance

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

DESCRIPTION

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW = 10 sec)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10

management applications of portable equipments.

The

DS(on)1

DS(on)2

2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt

3. Starting T

PA2800 is N-channel MOSFET designed for DC/DC converter and power

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

= 7.3 mΩ MAX. (V

= 10 mΩ MAX. (V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

MAXIMUM

s, Duty Cycle ≤ 1%

Note1

= 25°C, V

Note2

Note3

= 0 V)

= 4.5 V, I

= 10 V, I

RATINGS (T

= 15 V, R

N-CHANNEL POWER MOSFET

Note2

= 17 A)

= 8.5 A)

Note2

= 25 Ω, V

DATA SHEET

D(DC)

D(pulse)

stg

th(ch-A)

th(ch-C)

SWITCHING

DSS

GSS

= 25°C, All terminals are

= 20 → 0 V, L = 100

−55 to +150

MOS FIELD EFFECT TRANSISTOR

±102

83.3

28.9

±20

±17

150

2.4

1.5

3.8

°C/W

°C

0.4±0.1

PACKAGE DRAWING (Unit: mm)

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.2

3.3±0.15

3.0±0.1

1.75±0.1

PA2800

0.35

Source

Drain

0.4±0.1

Body

Diode

1, 2, 3

5, 6, 7, 8: Drain

: Source

: Gate

0.10 S

2008

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upa2800 Summary of contents

Page 1

N-CHANNEL POWER MOSFET DESCRIPTION μ The PA2800 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance R = 7.3 mΩ MAX DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

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upa2800 Renesas Electronics Corporation., upa2800 Datasheet

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