upa2451b Renesas Electronics Corporation., upa2451b Datasheet
upa2451b
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upa2451b Summary of contents
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N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION µ The PA2451B is a switching device, which can be driven directly by a 2.5 V power source. µ The PA2451B features a low on-state resistance and excellent switching characteristics, and is suitable for ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
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ELECTRICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA 1000 R Limited DS(on) ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 Pulsed 4.0 V 3 0.2 0.4 0.6 0 Drain to Source Voltage - V DS GATE ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 2 Pulsed 3 4 100 T - Channel Temperature - °C ...
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When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding the following contents. If used exceeding recommended conditions, there is a possibility of causing failure of ...
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This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion applied to the device should become below 2000 characteristic of a device may be degraded and it may result in ...
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The information in this document is current as of February, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...