upa2350t1p Renesas Electronics Corporation., upa2350t1p Datasheet - Page 2

• Manufacturer Part Number: upa2350t1p
• Description: Dual Nch Mosfet For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed
Test circuits are example of measuring the FET1 side.
TEST CIRCUIT 1 I
TEST CIRCUIT 3 V
When FET1 is
measured, between
GATE and SOURCE
of FET2 are shorted.
2
Zero Gate Voltage Source Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Source to Source On-state
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Body Diode Forward Voltage
CHARACTERISTICS
Note
SSS
GS(off)
V
GS
G1
G2
Note
Note
G1
G1
G2
G2
S2
I
I
V
| y
R
R
R
R
C
C
C
t
t
t
t
Q
V
SSS
GSS
d(on)
r
d(off)
f
SYMBOL
GS(off)
F(S-S)
S2
S2
SS(on)1
SS(on)2
SS(on)3
SS(on)4
iss
oss
rss
G
S1
fs
|
S1
S1
A
= 25°C) These are common to FET1 and FET2.
A
A
A
V
V
V
V
V
V
V
V
V
V
TEST CIRCUIT 7
V
V
TEST CIRCUIT 8
V
TEST CIRCUIT 9
I
Data Sheet G19739EJ1V0DS
F
SS
V
SS
GS
SS
SS
GS
GS
GS
GS
SS
DD
GS
DD
= 6.0 A, V
SS
= 20 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±12 V, V
= 4.5 V, I
= 4.0 V, I
= 3.1 V, I
= 2.5 V, I
= 10 V, I
= 4.0 V, R
= 16 V, V
TEST CIRCUIT 2 I
When FET1 is
measured, between
GATE and SOURCE
of FET2 are shorted.
TEST CIRCUIT 4 | y
ΔI
S
TEST CONDITIONS
GS
S
S
/ΔV
S
GS
S
S
S
S
GS
G1S1
= 1.0 mA, TEST CIRCUIT 3
= 3.0 A, TEST CIRCUIT 4
= 6.0 A,
G
= 0 V, TEST CIRCUIT 6
SS
= 3.0 A, TEST CIRCUIT 5
= 3.0 A, TEST CIRCUIT 5
= 3.0 A, TEST CIRCUIT 5
= 3.0 A, TEST CIRCUIT 5
= 0 V, TEST CIRCUIT 1
= 0 V, f = 1.0 MHz
= 6.0 Ω,
GS
= 0 V, TEST CIRCUIT 2
= 4.0 V, I
S
= 6.0 A,
GSS
fs
|
V
V
GS
GS
G1
G1
G2
G2
A
A
MIN.
0.5
2.5
G2
G2
22
23
24
30
G1
G1
S2
S2
TYP.
542
132
165
160
150
S1
S1
1.0
8.0
8.6
0.9
28
29
33
41
91
24
μ
S2
PA2350T1P
A
S1
S1
A
MAX.
V
±10
1.5
35
37
44
55
SS
1
UNIT
mΩ
mΩ
mΩ
mΩ
μ
μ
pF
pF
pF
nC
ns
ns
ns
ns
V
S
V
A
A