upa2550 Renesas Electronics Corporation., upa2550 Datasheet

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upa2550

Manufacturer Part Number
upa2550
Description
Dual P-channel Mosfet For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. G19179EJ1V0DS00 (1st edition)
Date Published March 2008 NS
Printed in Japan
management applications of portable equipments, such as load
switch.
contribute minimize the equipments.
FEATURES
• 1.8 V drive available
• Low on-state resistance
• Built-in gate protection diode
• Small and surface mount package (8-pin VSOF (2429))
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Marking: 2550
DESCRIPTION
The
Dual P-channel MOSFETs are assembled in one package, to
R
R
R
DS(on)1
DS(on)2
DS(on)3
μ
μ
PA2550T1H-T1-AT
PA2550T1H-T2-AT
μ
PA2550 is dual P-channel MOSFETs designed for power
PART NUMBER
= 40 mΩ MAX. (V
= 60 mΩ MAX. (V
= 93 mΩ MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Note
Note
GS
GS
GS
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
LEAD PLATING
Pure Sn
DUAL P-CHANNEL MOSFET
D
D
D
= −2.5 A)
= −2.5 A)
= −2.5 A)
FOR SWITCHING
DATA SHEET
8 mm embossed taping
MOS FIELD EFFECT TRANSISTOR
3000 p/reel
PACKING
0.32±0.05
S
PACKAGE DRAWING (Unit: mm)
8
1
0.65
2.9±0.1
8-pin VSOF (2429)
0.05 M S A
PACKAGE
μ
5
4
PA2550
A
1: Source1
2: Gate1
3: Source2
4: Gate2
5, 6: Drain2
7, 8: Drain1
0.17±0.05
0 to 0.025
2008

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upa2550 Summary of contents

Page 1

DESCRIPTION μ The PA2550 is dual P-channel MOSFETs designed for power management applications of portable equipments, such as load switch. Dual P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. FEATURES • 1.8 V drive available • ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 unit Note2 Total Power ...

Page 3

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

Page 4

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA -100 I D(pulse) -10 ...

Page 5

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -25 Pulsed - −4 -15 −2.5 V -10 −1 -0 Drain to Source Voltage - V DS GATE TO SOURCE CUT-OFF VOLTAGE ...

Page 6

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 I = −2 Pulsed −1 −2 −4 - Channel Temperature - °C ch SWITCHING ...

Page 7

The information in this document is current as of March, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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