upa2750gr Renesas Electronics Corporation., upa2750gr Datasheet
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
upa2750gr
Available stocks
Related parts for upa2750gr
upa2750gr Summary of contents
Page 1
N-CHANNEL POWER MOS FET DESCRIPTION The PA2750GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management application of notebook computers. FEATURES Dual chip type Low on-state resistance R = 15.5 m MAX ...
Page 2
ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...
Page 3
TYPICAL CHARACTERISTICS (T A FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 25˚C A 0.1 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN ...
Page 4
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 Pulsed 100 T - Channel Temperature - ˚C ch ...
Page 5
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse) I ...
Page 6
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 Starting 8 100 ...
Page 7
Data Sheet G15780EJ1V0DS PA2750GR 7 ...
Page 8
The information in this document is current as of March, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...