upa2756 Renesas Electronics Corporation., upa2756 Datasheet
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upa2756
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upa2756 Summary of contents
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DESCRIPTION µ The PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. FEATURES • Low on-state resistance R = 105 mΩ MAX DS(on 150 mΩ MAX 4.0 ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed 4 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 Drain to Source Voltage - V DS ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 200 180 Pulsed 160 140 120 100 -50 - 100 125 ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 4 Ω 20→ Starting T = 25°C ch 0.1 µ µ 10 ...
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The information in this document is current as of January, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...