upa2757 Renesas Electronics Corporation., upa2757 Datasheet
upa2757
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upa2757 Summary of contents
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N-CHANNEL POWER MOS FET DESCRIPTION μ The PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance R = 36.0 mΩ MAX DS(on 50.0 mΩ ...
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ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage ( Gate to Source Voltage ( Note2 Drain Current (DC 25°C) C Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 unit) ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 Pulsed Drain to Source Voltage - V DS GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed 4 - 100 - Channel Temperature - ° SWITCHING ...
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TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Reel side MARKING INFORMATION RECOMMENDED SOLDERING CONDITIONS μ The PA2757GR should be soldered and mounted under the following recommended conditions. For soldering methods ...
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The information in this document is current as of November, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...