upa2755 Renesas Electronics Corporation., upa2755 Datasheet

no-image

upa2755

Manufacturer Part Number
upa2755
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2755.pdf (7 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
upa2755AGR
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
upa2755AGR-E1-AT/JM
Manufacturer:
NEC
Quantity:
10 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
upa2755AGR-E1-AT/JM
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
upa2755GR
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
upa2755GR-A
Manufacturer:
NEC
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
upa2755GR-E1
Manufacturer:
NEC
Quantity:
20 000
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
upa2755GR-E1-A
Manufacturer:
NEC
Quantity:
8 000
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
upa2755GR-E2-A
Manufacturer:
RENESAS
Quantity:
1 000
Document No. G19282EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
DESCRIPTION
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
• Dual chip type
• Low on-state resistance
• Low input capacitance
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 units)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
The
R
R
C
DS(on)1
DS(on)2
iss
= 650 pF TYP.
μ
2. Mounted on ceramic substrate of 2000 mm
3. Starting T
PA2755AGR is Dual N-channel MOS Field Effect
= 18 mΩ MAX. (V
= 29 mΩ MAX. (V
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
= 25°C)
Note3
Note3
DS
GS
GS
GS
= 0 V)
= 0 V)
= 10 V, I
= 4.5 V, I
DD
Note2
Note2
N-CHANNEL POWER MOS FET
= 15 V, R
D
D
= 4.0 A)
= 4.0 A)
A
G
= 25°C, All terminals are connected.)
= 25 Ω, V
DATA SHEET
I
D(pulse)
I
V
V
D(DC)
T
E
T
SWITCHING
P
P
I
DSS
GSS
AS
stg
AS
ch
T
T
2
x 2.2 mm
GS
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V
−55 to +150
±8.0
±20
±32
150
1.7
2.0
6.4
30
8
PACKAGE DRAWING (Unit: mm)
8
1
μ
5.37 MAX.
0.40
mJ
°C
°C
1.27
W
W
V
V
A
A
A
PA2755AGR
+0.10
–0.05
0.78 MAX.
5
4
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1
2
7, 8: Drain 1
3
4
5, 6: Drain 2
0.5 ±0.2
: Source 1
: Gate 1
: Source 2
: Gate 2
6.0 ±0.3
(1/2 circuit)
4.4
Source
Drain
0.8
Body
Diode
0.10
2008

Related parts for upa2755

Image
Part Number
Description
Manufacturer
Datasheet
Request R
HD6417709S
Part Number:
HD6417709S
Description:
Renesas Technology Corp [Renesas 32-Bit RISC Microcomputer Super RISC engine Family/SH7700 Series]
Manufacturer:
Renesas Electronics Corporation.
Datasheet:
HD6417709S.pdf (807 pages)
M30291FCTHP
Part Number:
M30291FCTHP
Description:
RENESAS MCU M16C FAMILY / M16C/Tiny SERIES
Manufacturer:
Renesas Electronics Corporation.
Datasheet:
M30291FCTHP.pdf (499 pages)
R0K505210S000BE
Part Number:
R0K505210S000BE
Description:
Renesas Starter Kit for RX210
Manufacturer:
Renesas Electronics Corporation.
R0K505630S000BE
Part Number:
R0K505630S000BE
Description:
EVALBOARD/Renesas StarterKit for RX630
Manufacturer:
Renesas Electronics Corporation.
R0K50563NS000BE
Part Number:
R0K50563NS000BE
Description:
EVALBOARD/Renesas Starter Kit+ for RX63N
Manufacturer:
Renesas Electronics Corporation.
R0K507269S000BE
Part Number:
R0K507269S000BE
Description:
EVALBOARD/Renesas Starter Kit
Manufacturer:
Renesas Electronics Corporation.
Y-PG-FP5-EE
Part Number:
Y-PG-FP5-EE
Description:
FLASH PROGRAMMER FOR RENESAS MICROCONTROLLERS
Manufacturer:
Renesas Electronics Corporation.
HA1127
Part Number:
HA1127
Description:
Manufacturer:
Renesas Electronics Corporation.
Datasheet:
HA1127.pdf (7 pages)
HA17747
Part Number:
HA17747
Description:
Manufacturer:
Renesas Electronics Corporation.
Datasheet:
HA17747.pdf (5 pages)
UPD3799CY
Part Number:
UPD3799CY
Description:
Manufacturer:
Renesas Electronics Corporation.
Datasheet:
UPD3799CY.pdf (20 pages)
UPD3719D
Part Number:
UPD3719D
Description:
Manufacturer:
Renesas Electronics Corporation.
Datasheet:
UPD3719D.pdf (20 pages)
UPD3778CY
Part Number:
UPD3778CY
Description:
Manufacturer:
Renesas Electronics Corporation.
Datasheet:
UPD3778CY.pdf (24 pages)
UPD3777CY
Part Number:
UPD3777CY
Description:
Manufacturer:
Renesas Electronics Corporation.
Datasheet:
UPD3777CY.pdf (20 pages)
UPD3798CY
Part Number:
UPD3798CY
Description:
Manufacturer:
Renesas Electronics Corporation.
Datasheet:
UPD3798CY.pdf (20 pages)
UPD3728DZ
Part Number:
UPD3728DZ
Description:
Manufacturer:
Renesas Electronics Corporation.
Datasheet:
UPD3728DZ.pdf (28 pages)

upa2755 Summary of contents

Page 1

DESCRIPTION μ The PA2755AGR is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Dual chip type • Low on-state resistance mΩ MAX ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 40 Pulsed 4 0.0 0.2 0.4 0.6 0.8 1 Drain to Source Voltage - V DS GATE ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 Pulsed 4 -50 - 100 125 150 175 - ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 = 25 Ω Starting 6 μ μ 10 100 1 ...

Page 7

The information in this document is current as of May, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

Related keywords