upa2734gr-e2-at Renesas Electronics Corporation., upa2734gr-e2-at Datasheet
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upa2734gr-e2-at
Manufacturer Part Number
upa2734gr-e2-at
Description
Switching P-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2734GR-E2-AT.pdf
(6 pages)
Document No. G19426EJ1V0DS00 (1st edition)
Date Published September 2008 NS
Printed in Japan
DESCRIPTION
FEATURES
• Low input capacitance
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
• RoHS Compliant
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
designed for DC/DC converter and power management
applications.
• Low on-state resistance
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation (PW = 10 sec)
Channel Temperature
Storage Temperature
Notes 1. V
The
R
R
C
μ
μ
DS(on)1
DS(on)2
iss
PA2734GR-E1-AT
PA2734GR-E2-AT
μ
= 1130 pF TYP. (V
2. PW ≤ 10
3. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
PART NUMBER
PA2734GR is P-Channel MOS Field Effect Transistor
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
= 38 mΩ MAX. (V
= 72 mΩ MAX. (V
GS
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= −4.5 V
μ
Note1
s, Duty Cycle ≤ 1%
Note2
Note
Note
Note3
DS
DS
GS
GS
GS
= −10 V, V
= 0 V)
= 0 V)
= −4.5 V, I
= −2.5 V, I
LEAD PLATING
P-CHANNEL POWER MOS FET
Pure Sn
GS
Note3
D
D
= 0 V)
A
= −7.0 A)
= −3.5 A)
= 25°C, All terminals are connected.)
DATA SHEET
SWITCHING
V
V
I
I
P
P
T
T
D(DC)
D(pulse)
DSS
GSS
T1
T2
ch
stg
MOS FIELD EFFECT TRANSISTOR
Tape 2500 p/reel
PACKING
−55 to +150
−30
m12
m28
150
1.1
2.5
m7
8
1
PACKAGE DRAWING (Unit: mm)
5.37 MAX.
°C
°C
W
W
0.40
μ
V
V
A
A
1.27
+0.10
–0.05
0.78 MAX.
PA2734GR
5
4
Power SOP8
0.08 g TYP.
0.12 M
PACKAGE
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1, 2, 3
4
5, 6, 7, 8 : Drain
0.5 ±0.2
6.0 ±0.3
4.4
: Source
: Gate
Source
Drain
Body
Diode
0.8
0.10
2008