upa2733 Renesas Electronics Corporation., upa2733 Datasheet
upa2733
Manufacturer Part Number
upa2733
Description
Switching P-channel Power Mosfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2733.pdf
(6 pages)
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Document No. G17460EJ2V0DS00 (2nd edition)
Date Published November 2005 NS CP(K)
Printed in Japan
FEATURES
• Low on-state resistance
• Low C
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
DESCRIPTION
designed for power management applications of notebook
computers and so on.
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation (PW = 10 sec)
Channel Temperature
Storage Temperature
Notes 1. PW ≤ 10
The
R
R
DS(on)1
DS(on)2
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
μ
μ
μ
μ
μ
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
PA2733GR is P-channel MOS Field Effect Transistor
iss
PA2733GR-E1
PA2733GR-E1-A
PA2733GR-E2
PA2733GR-E2-A
= 38 mΩ MAX. (V
= 53 mΩ MAX. (V
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
: C
PART NUMBER
iss
= 870 pF TYP.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
s, Duty Cycle ≤ 1%
Note1
Note
Note
Note2
DS
GS
GS
GS
= 0 V)
= 0 V)
= −10 V, I
= −4.5 V, I
P-CHANNEL POWER MOSFET
Note2
D
D
= −2.5 A)
= −2.5 A)
Power SOP8
Power SOP8
Power SOP8
Power SOP8
The mark <R> shows major revised points.
A
PACKAGE
= 25°C, All terminals are connected.)
DATA SHEET
I
I
D(pulse)
V
V
SWITCHING
D(DC)
P
P
T
T
DSS
GSS
stg
T1
T2
ch
MOS FIELD EFFECT TRANSISTOR
–55 to +150
−30
m20
m20
150
1.1
2.5
m5
PACKAGE DRAWING (Unit: mm)
8
1
5.37 MAX.
°C
°C
μ
W
W
V
V
A
A
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
PA2733GR
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1, 2, 3
4
5, 6, 7, 8: Drain
0.5 ±0.2
6.0 ±0.3
4.4
: Source
: Gate
Source
Drain
Body
Diode
0.8
0.10
2005
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upa2733 Summary of contents
Page 1
DESCRIPTION The μ PA2733GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • Low on-state resistance = − mΩ MAX. (V DS(on −4.5 ...
Page 2
ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
Page 3
TYPICAL CHARACTERISTICS (T <R> DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 Ambient Temperature - ° 1000 100 10 1 Single pulse, T Mounted on a ...
Page 4
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -2.5 -2 -1 − − - 100 T - Channel Temperature - °C ch DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN ...
Page 5
SWITCHING CHARACTERISTICS 1000 t d (off) 100 − (on − Ω -0 Drain Current - A ...
Page 6
The information in this document is current as of November, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...