upa2732ut1a Renesas Electronics Corporation., upa2732ut1a Datasheet - Page 3

• Manufacturer Part Number: upa2732ut1a
• Description: Switching P-channel Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
-200
-150
-100
120
100
80
60
40
20
-50
0
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
0
0
25
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
-0.2
V
- Drain to Source Voltage - V
T
GS
A
50
1000
0.01
= − 10V
- Ambient Temperature - °C
100
0.1
10
100
1
-0.4
75
μ
Single pulse
R
th(ch-A)
100
-0.6
1 m
: Mounted on a glass epoxy board (25.4mm x 25.4mm x 0.8 mm)
− 4.5V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
125
A
-0.8
= 25°C)
Pulsed
150
10 m
175
Data Sheet G17641EJ1V1DS
-1
PW - Pulse Width - s
100 m
-1000
-100
1
-1000
-0.1
-0.01
-10
-100
-0.1
-1
-10
-1
-0.01
FORWARD BIAS SAFE OPERATING AREA
FORWARD TRANSFER CHARACTERISTICS
0
T
Single P ulse
M o unted o n a galass epo xy bo ard
(25.4mm × 25.4mm × 0.8mm)
I
I
A
D(pul s e)
D(DC)
=25°C
V
10
DS
V
T
GS
ch
- Drain to Source Voltage - V
-0.1
=150°C
R
R
-1
- Gate to Source Voltage - V
−55°C
th(ch-A)
th(ch-C)
75°C
25°C
100
= 83.3°C/W
= 1.5°C/W
-1
-2
μ
1000
Pulsed
V
DS
PA2732UT1A
-10
-3
=−10V
-100
-4
3