upa2743t1a Renesas Electronics Corporation., upa2743t1a Datasheet

upa2743t1a

Manufacturer Part Number

upa2743t1a

Description

Switching N-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2743T1A.pdf (6 pages)

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Document No. G19790EJ1V0DS00 (1st edition)

Date Published May 2009 NS

Printed in Japan

DESCRIPTION

FEATURES

• Low on-state resistance

• Built-in gate protection diode

• Thin type surface mount package with heat spreader (8-pin HVSON (6051))

• RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (T

THERMAL RESISTANCE

Channel to Ambient Thermal Resistance

Channel to Case (Drain) Thermal Resistance

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW = 10 sec)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10

for power management applications of a notebook computer.

The

DS(on)1

DS(on)2

2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

3. Starting T

PA2743T1A is N-channel MOS Field Effect Transistor designed

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

= 3.3 mΩ MAX. (V

= 4.6 mΩ MAX. (V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

s, Duty Cycle ≤ 1%

Note1

= 25°C, V

Note2

Note3

= 0 V)

= 10 V, I

= 4.5 V, I

= 15 V, R

N-CHANNEL POWER MOSFET

Note2

= 15 A)

Note2

= 15 A)

= 25°C, All terminals are connected.)

= 25 Ω, V

DATA SHEET

D(DC)

D(pulse)

stg

SWITCHING

DSS

GSS

th(ch-A)

th(ch-C)

MOS FIELD EFFECT TRANSISTOR

= 20 → 0 V, L = 100

−55 to +150

±170

84.1

83.3

±20

±29

150

1.5

4.6

1.5

°C/W

°C

PA2743T1A

PACKAGE DRAWING (Unit: mm)

EQUIVALENT CIRCUIT

0.2

Gate

Protection

Diode

0.6 ±0.15

5.4 ±0.2

3.65 ±0.2

6 ±0.2

Source

Drain

0.7 ±0.15

1, 2, 3

5, 6, 7, 8: Drain

Body

Diode

2009

: Source

: Gate

0.10 S

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upa2743t1a Summary of contents

Page 1

N-CHANNEL POWER MOSFET DESCRIPTION μ The PA2743T1A is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer. FEATURES • Low on-state resistance R = 3.3 mΩ MAX DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current I Gate Leakage Current I Gate to Source Cut-off Voltage V Note Forward Transfer Admittance | y Note Drain to Source On-state Resistance R R Input Capacitance C Output Capacitance ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 - Ambient Temperature - ° TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 ...

Page 4

GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 2.5 2 1.5 1 0.5 0 -75 - Channel Temperature - °C ch DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4.5 ...

Page 5

DYNAMIC INPUT CHARACTERISTICS Gate Charge - nC G ORDERING INFORMATION PART NUMBER LEAD PLATING Note μ PA2743T1A-E1-AY Pure ...

Page 6

The information in this document is current as of May, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of ...

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