upa2790 Renesas Electronics Corporation., upa2790 Datasheet

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upa2790

Manufacturer Part Number
upa2790
Description
Switching N- And P-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. G16954EJ3V0DS00 (3rd edition)
Date Published September 2006 NS CP(K)
Printed in Japan
DESCRIPTION
Transistors designed for Motor Drive application.
• Low input capacitance
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
FEATURES
• Low on-state resistance
N-channel C
P-channel C
The
N-channel R
P-channel R
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
PART NUMBER
μ
μ
PA2790GR is N- and P-channel MOS Field Effect
PA2790GR
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
R
R
DS(on)1
DS(on)2
DS(on)1
DS(on)2
iss
iss
= 500 pF TYP.
= 460 pF TYP.
= 60 mΩ MAX. (V
= 80 mΩ MAX. (V
= 28 mΩ MAX. (V
= 40 mΩ MAX. (V
N- AND P-CHANNEL POWER MOS FET
Power SOP8
PACKAGE
GS
GS
The mark <R> shows major revised points.
GS
GS
= −10 V, I
= −4.5 V, I
= 10 V, I
= 4.5 V, I
DATA SHEET
SWITCHING
D
D
D
D
= 3 A)
= −3 A)
= 3 A)
= −3 A)
MOS FIELD EFFECT TRANSISTOR
Gate
Gate
Protection
Diode
N-channel
8
1
Source
PACKAGE DRAWING (Unit: mm)
5.37 Max.
Drain
0.40
EQUIVALENT CIRCUITS
1.27
μ
+0.11
–0.05
Body
Diode
PA2790GR
5
4
0.6
0.12 M
N-channel
P-channel
Gate
Gate
Protection
Diode
0.5 ±0.2
6.0 ±0.3
4.0
P-channel
1
2
7, 8
3
4
5, 6
: Source 1
: Gate 1
: Drain 1
: Source 2
: Gate 2
: Drain 2
Source
Drain
Body
Diode
1.0
0.10
2004

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upa2790 Summary of contents

Page 1

N- AND P-CHANNEL POWER MOS FET DESCRIPTION μ The PA2790GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. FEATURES • Low on-state resistance N-channel mΩ MAX. (V DS(on mΩ ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 unit) Note2 Total Power Dissipation ...

Page 3

ELECTRICAL CHARACTERISTICS (T N-channel CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

Page 4

P-channel CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall ...

Page 5

TYPICAL CHARACTERISTICS (T A (1) N-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING ...

Page 6

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 4 0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL ...

Page 7

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 4 Pulsed 0 - 100 T - Channel Temperature - °C ch ...

Page 8

P-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA -100 I D(pulse) ...

Page 9

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - −10 V −4 -20 -15 −4.0 V -10 -5 Pulsed 0 0 -0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. ...

Page 10

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 = −4 −4 − - 100 T - Channel Temperature - °C ch SWITCHING CHARACTERISTICS 100 ...

Page 11

The information in this document is current as of September, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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