upa2793agr Renesas Electronics Corporation., upa2793agr Datasheet - Page 10

• Manufacturer Part Number: upa2793agr
• Description: Switching N- And P-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

10
1000
100
100
0.1
10
40
30
20
10
10
0
1
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
-0.1
-50
0
T
SWITCHING CHARACTERISTICS
V
ch
t
t
t
F(S-D)
d(off)
r
d(on)
−10 V
- Channel Temperature - °C
V
0
GS
t
f
- Source to Drain Voltage - V
I
D
0.5
= −4.5 V
- Drain Current - A
V
GS
50
-1
= −4.5 V
−10 V
0 V
1
100
V
V
R
I
Pulsed
D
DD
GS
G
= −3.5 A
= 0 Ω
= −20 V
= −10 V
Pulsed
Data Sheet G19921EJ1V0DS
150
-10
1.5
10000
100
1000
-40
-30
-20
-10
10
100
-0
1
-0.1
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
-0.1
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
0
di/dt = −50 A/μs
V
GS
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
= 0 V
10
I
V
F
DS
- Diode Forward Current - A
V
Q
DD
- Drain to Source Voltage - V
-1
V
G
-1
= −32 V
DS
- Gate Charge - nC
20
−20 V
−8 V
C
C
C
V
iss
oss
rss
GS
30
μ
-10
-10
PA2793AGR
I
V
f = 1 MHz
D
40
GS
= −7 A
= 0 V
-100
-100
50
-12
-9
-6
-3
-0