upa2710 Renesas Electronics Corporation., upa2710 Datasheet
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
upa2710
Related parts for upa2710
upa2710 Summary of contents
Page 1
P-CHANNEL POWER MOS FET DESCRIPTION The PA2710GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-state resistance R = 5.5 m MAX – ...
Page 2
ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Note Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...
Page 3
TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 1000 I D(pulse) ...
Page 4
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 120 4 100 0 Drain to Source Voltage - V ...
Page 5
DRAIN TO SOURCE ON-STATERESISTANCE vs. CHANNEL TEMPERATURE 4 4 uls 7 100 T - Channel Temperature - °C ch ...
Page 6
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 Starting T = 25° ...
Page 7
The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...