upa2716 Renesas Electronics Corporation., upa2716 Datasheet
upa2716
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upa2716 Summary of contents
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P-CHANNEL POWER MOS FET DESCRIPTION The μ PA2716AGR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Lithium-Ion battery protection circuit. FEATURES • Low on-state resistance = − 7.0 mΩ ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA -1000 I D(pulse) ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -150 Pulsed = − -125 −4.5 V -100 -75 -50 - -0.2 -0.4 -0 Drain to Source Voltage - V DS GATE TO SOURCE CUT-OFF VOLTAGE ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE − Pulsed 15 = − −4.5 V − - 100 - Channel Temperature - ° SWITCHING ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD -100 I = − - − − 20 → Ω Starting T = 25°C ...
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The information in this document is current as of May, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...