upa2719 Renesas Electronics Corporation., upa2719 Datasheet
upa2719
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upa2719 Summary of contents
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DESCRIPTION μ The PA2719AGR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Lithium-Ion battery protection circuit. FEATURES • Low on-state resistance = − mΩ MAX. (V DS(on)1 GS ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...
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ELECTRICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA -1000 I D(pulse) -100 ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -125 Pulsed -100 = − -75 −4 V -50 - -0 Drain to Source Voltage - V DS GATE TO SOURCE CUT-OFF VOLTAGE vs. ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 = − −4 − − Pulsed 0 - 100 - Channel Temperature - ° SWITCHING CHARACTERISTICS ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 I = − − Ω − 20 → 0 ...
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The information in this document is current as of May, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...