upa2717 Renesas Electronics Corporation., upa2717 Datasheet
upa2717
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upa2717 Summary of contents
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P-CHANNEL POWER MOS FET DESCRIPTION The μ PA2717AGR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Lithium-Ion battery protection circuit. FEATURES • Low on-state resistance = − 5.5 mΩ ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA - 1000 I ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 150 Pulsed - 125 V = − −4 100 −4 0.2 - 0 Drain ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE − 7 Pulsed V = − 4 − 4 − 100 T - Channel Temperature ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 = − 22 − −20 → Ω Starting ...
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The information in this document is current as of May, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...