upa2700 Renesas Electronics Corporation., upa2700 Datasheet

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upa2700

Manufacturer Part Number
upa2700
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2700.pdf (8 pages)

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Document No. G15672EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW
The PA2700GR is N-Channel MOS Field Effect Transistor
Low on-state resistance
R
R
Low C
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
3. Starting T
PA2700GR
iss
= 5.3 m
= 7.3 m
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
: C
iss
= 2600 pF TYP. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty Cycle
ch
MAX. (V
MAX. (V
Note1
= 25°C, V
Note3
DS
Note3
A
GS
= 25°C)
GS
GS
= 0 V)
= 0 V)
= 10 V, I
= 4.5 V, I
DD
N-CHANNEL POWER MOS FET
DS
= 15 V, R
Power SOP8
Note2
PACKAGE
1%
= 10 V, V
D
D
A
= 9.0 A)
= 9.0 A)
= 25°C, All terminals are connected.)
The mark
G
= 25
GS
DATA SHEET
SWITCHING
= 0 V)
I
D(pulse)
V
I
V
D(DC)
T
E
, L = 100 H, V
T
P
I
2
DSS
GSS
AS
stg
AS
ch
x 2.2 mm
T
shows major revised points.
MOS FIELD EFFECT TRANSISTOR
–55 to + 150
28.9
150
2.0
30
17
20
17
68
GS
= 20
PACKAGE DRAWING (Unit: mm)
8
1
5.37 MAX.
mJ
°C
°C
W
V
V
A
A
A
0 V
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
PA2700GR
0.12 M
EQUIVALENT CIRCUIT
Gate
1, 2, 3
4
5, 6, 7, 8 ; Drain
0.5 ±0.2
©
6.0 ±0.3
4.4
Source
; Source
; Gate
Drain
Body
Diode
0.8
0.10
2002

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upa2700 Summary of contents

Page 1

N-CHANNEL POWER MOS FET DESCRIPTION The PA2700GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES Low on-state resistance R = 5.3 m MAX DS(on)1 GS ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I 68 ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 150˚ 0 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 Pulsed ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 Pulsed 4 100 125 T - Channel Temperature - ˚C ch CAPACITANCE vs. ...

Page 6

Data Sheet G15672EJ2V0DS PA2700GR ...

Page 7

Data Sheet G15672EJ2V0DS PA2700GR 7 ...

Page 8

The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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