upa2707gr-e2-a Renesas Electronics Corporation., upa2707gr-e2-a Datasheet - Page 6

no-image

upa2707gr-e2-a

Manufacturer Part Number
upa2707gr-e2-a
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
PACKAGE DRAWING (Unit: mm)
Power SOP8
EQUIVALENT CIRCUIT
Gate
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
6
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
8
1
5.37 MAX.
Source
Drain
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
Body
Diode
0.12 M
1, 2, 3
4
5, 6, 7, 8 ; Drain
0.5 ±0.2
6.0 ±0.3
4.4
; Source
; Gate
0.8
Data Sheet G17032EJ1V0DS
0.10
µ
PA2707GR

Related parts for upa2707gr-e2-a